We present a novel method for simultaneous measurement of the thickness and refractive
index distribution of a transparent specimen by a line-field swept-source interferometer. In …

Real-time measurement of the thickness and group refractive index is crucial for
semiconductor devices. In this paper, we proposed a fast synchronous method for …

In this investigation, we propose a technique to obtain not only the dimensional profile of an
undoped double-side polished silicon (Si) wafer but also its refractive index profile …

In this investigation, refractive indices of a silicon (Si) wafer were measured by low-
coherence scanning interferometry adopting the sub-sampling technique to reduce …

We propose and demonstrate the novel method that enables simultaneous measurements
of physical thickness and refractive group index without any prior knowledge on samples …

The measurement of center thicknesses and airgaps along its optical axis is crucial to a
mounted optical system. Aiming to real-time dimensional metrology, an extended range …

In this investigation, we describe a combined low-coherence interferometric technique to
measure the surface and thickness profiles of wafers at once with high speed. The …

Simultaneous measurement of thickness and refractive index is an important quality control
scheme in high-end fabrication. However, the precise measurement of large-range …

We propose an optical system capable of simultaneously measuring physical thickness,
group refractive index, and surface profile of a single-layer substrate based on a spectral …

In this study, an optical system for simultaneous measurement of physical thickness, group
refractive index, bow, and warp of a large silicon wafer is first proposed based on a reflection …