Influence of dipolar defects on switching behavior in ferroelectrics
R Ahluwalia, W Cao - Physical Review B, 2000 - APS
By including the contributions of dipolar defects in the time-dependent Ginzburg-Landau
theory, we have simulated the domain switching process in ferroelectrics. The model …
theory, we have simulated the domain switching process in ferroelectrics. The model …
Landau theory of structures in tetragonal-orthorhombic ferroelastics
AE Jacobs - Physical Review B, 2000 - APS
A Landau expansion of the elastic energy in the strains is used to study two-dimensional
structures in tetragonal-orthorhombic ferroelastics with constraints. Local energy minima are …
structures in tetragonal-orthorhombic ferroelastics with constraints. Local energy minima are …
Nanoscale science and technology at Los Alamos national laboratory
Research in the emerging field of nanoscale science and technology has grown steadily at
Los Alamos National Laboratory since 1990. This article summarizes some of this work …
Los Alamos National Laboratory since 1990. This article summarizes some of this work …
Three-Dimensional Elastic Compatibility: Twinning in Martensites
KØ Rasmussen, T Lookman, A Saxena… - arXiv preprint cond-mat …, 2000 - arxiv.org
We show how the St. Venant compatibility relations for strain in three dimensions lead to
twinning for the cubic to tetragonal transition in martensitic materials within a Ginzburg …
twinning for the cubic to tetragonal transition in martensitic materials within a Ginzburg …
Signatures of long-range elastic interaction in textured materials
T Lookman, A Saxena, DA Dimitrov, AR Bishop… - Physical Review B, 2000 - APS
We show that specific signatures in the pair distribution function and x-ray and neutron-
scattering structure factors in a variety of functional elastic materials, previously ascribed to …
scattering structure factors in a variety of functional elastic materials, previously ascribed to …
[PDF][PDF] Stripes and electron-lattice interactions
A radical change of philosophy from traditional solid state and manybody approaches
appears necessary to describe many classes of complex electronic materials, both inorganic …
appears necessary to describe many classes of complex electronic materials, both inorganic …
[引用][C] THERMEC'2000: International Conference on Processing and Manufacturing of Advanced Materials
T Chandra, K Higashi, C Suryanarayana, C Tome - Journal of Materials Processing …, 2000