Two-photon absorption coefficients of GaN for below band gap ultraviolet wavelength and
midgap infrared wavelength were measured by using femtosecond pulsewidth …

Spectroscopic ellipsometry (SE) carried out at 300 K together with reflectivity measurements
performed from 5 to 300 K are used to determine the temperature dependence of the …

Standard variable angle spectroscopic ellipsometry (VASE) has been employed to study the
ordinary optical dielectric response of hexagonal gallium nitride (GaN) thin films—an …

We have studied third order nonlinearities, including two-photon absorption coefficient β and
nonlinear refractive index n 2, of GaN in below bandgap ultraviolet (UV) wavelength regime …

Effects of dry processing on the band-edge, blue, and yellow luminescence behavior of GaN
surfaces exposed to SF 6 and Ar plasmas have been investigated. Our results indicate that a …

A detailed self-consistent threshold simulation of the continuous wave (CW) operations at
room temperature (RT) of possible GaN/AlGaN/AlN vertical-cavity surface-emitting lasers …

The optical properties of Mn-doped GaN were investigated. The films were grown by
metalorganic vapor phase epitaxy using tricarbonyl (methylcyclopentadienyl) manganese as …

Room-temperature cathodoluminescence depth-profiling studies of GaN films grown on
sapphire and on SiC are reported. The spectral characteristics were quantitatively analysed …

We have modeled the dielectric function of wurtzite Al x Ga 1-x N alloys for normal
polarization in the energy range up to 10 eV and for all compositions 0≤ x≤ 1. The …

Effects of dry processing on the band-edge, blue and yellow luminescence behaviour of
GaN surfaces exposed to SF6 and Ar plasmas have been investigated. Our results indicate …