High-extraction-efficiency blue light-emitting diode using extended-pitch photonic crystal
K Orita, S Tamura, T Takizawa, T Ueda… - Japanese journal of …, 2004 - iopscience.iop.org
We have integrated the surface photonic crystal (PhC) on GaN-based blue light-emitting
diodes (LEDs) for the first time in order to enhance the extraction efficiency of the LEDs. With …
diodes (LEDs) for the first time in order to enhance the extraction efficiency of the LEDs. With …
[PDF][PDF] 基于透射谱的GaN 薄膜厚度测量
张进城， 郝跃， 李培咸， 范隆， 冯倩 - 2004 - wulixb.iphy.ac.cn
基于透射谱的GaN 薄膜厚度测量 Page 1 基于透射谱的GaN 薄膜厚度测量! 张进城郝跃李培咸范
隆冯倩 (西安电子科技大学微电子研究所,西安710071) (2003 年6 月6 日收到;2003 年7 月31 日 …
隆冯倩 (西安电子科技大学微电子研究所,西安710071) (2003 年6 月6 日收到;2003 年7 月31 日 …
Materials properties of nitrides: summary
SL Rumyantsev, MS Shur… - International Journal of …, 2004 - World Scientific
The interest in III-N materials (stimulated by pioneering work of Pankove, Akasaki,
Nakamura, and many others) dates back to 1970s. High-power microwave/millimeter wave …
Nakamura, and many others) dates back to 1970s. High-power microwave/millimeter wave …
Efficiency improvement of AlGaInN LEDs advanced by ray-tracing analysis
V Zabelin, DA Zakheim… - IEEE journal of quantum …, 2004 - ieeexplore.ieee.org
A modified ray-tracing model is applied to analyze the dependence of external quantum
efficiency and far-field radiation pattern of AlGaInN light-emitting diodes (LEDs) on various …
efficiency and far-field radiation pattern of AlGaInN light-emitting diodes (LEDs) on various …
MOCVD growth of AlN/GaN DBR structures under various ambient conditions
HH Yao, CF Lin, HC Kuo, SC Wang - Journal of crystal growth, 2004 - Elsevier
The high-reflectivity AlN/GaN distributed Bragg reflector (DBR) structures were realized by
metal organic chemical vapor deposition (MOCVD) growth under pure N2 ambient for AlN …
metal organic chemical vapor deposition (MOCVD) growth under pure N2 ambient for AlN …
Micro cavity effect in GaN-based light-emitting diodes formed by laser lift-off and etch-back technique
T Fujii, A David, C Schwach, PM Pattison… - Japanese journal of …, 2004 - iopscience.iop.org
Electroluminescence measurements were performed on GaN-based micro-cavity light-
emitting diodes (MCLEDs) which had different cavity thickness. The MCLEDs were …
emitting diodes (MCLEDs) which had different cavity thickness. The MCLEDs were …
[PDF][PDF] GaN 折射率的椭圆偏振光谱研究
连传昕， 李向阳， 刘骥 - 红外与毫米波学报, 2004 - journal.sitp.ac.cn
利用400~ 1200nm 波段的椭圆偏振光谱对生长在蓝宝石衬底上的非故意掺杂纤锌矿氮化镓(
GaN) 外延薄膜进行了研究. 通过拟合实验数据获得了GaN 薄膜的厚度和在可见一近红外区域的 …
GaN) 外延薄膜进行了研究. 通过拟合实验数据获得了GaN 薄膜的厚度和在可见一近红外区域的 …
Absorption in InGaN-on-sapphire LED structures: comparison between photocurrent measurement method (PMM) and photothermal deflection spectroscopy (PDS)
SS Schad, B Neubert, J Bruening… - Light-Emitting …, 2004 - spiedigitallibrary.org
In this work, we investigate the absorption distribution in InGaN-on-sapphire based light-
emitting diodes (LEDs). We observed by photothermal deflection spectroscopy (PDS) and …
emitting diodes (LEDs). We observed by photothermal deflection spectroscopy (PDS) and …
[图书][B] Dielectric and electrooptic properties of PMN-PT single crystals and thin films
KC Cheng - 2004 - search.proquest.com
Dielectric and electro-optical properties of ferroelectric lead magnesium niobate-lead
titanate Pb (Mg 1/3 Nb 2/3) O 3-PbTiO 3 (or PMN-PT) single crystals and thin films were …
titanate Pb (Mg 1/3 Nb 2/3) O 3-PbTiO 3 (or PMN-PT) single crystals and thin films were …
Activation of beryllium-implanted gallium nitride by combined pulse laser and rapid thermal annealing
LS Tan, HT Wang, EF Chor - Proceedings. 7th International …, 2004 - ieeexplore.ieee.org
Investigations of post-implantation annealing were carried out on gallium nitride wafers that
had been implanted with beryllium ions. The thermal processes performed were rapid …
had been implanted with beryllium ions. The thermal processes performed were rapid …