Band-gap measurements of direct and indirect semiconductors using monochromated electrons
With the development of monochromators for transmission electron microscopes, valence
electron-energy-loss spectroscopy (VEELS) has become a powerful technique to study the …
electron-energy-loss spectroscopy (VEELS) has become a powerful technique to study the …
Photocatalytic overall water splitting on gallium nitride powder
K Maeda, K Teramura, N Saito, Y Inoue… - Bulletin of the …, 2007 - academic.oup.com
Gallium nitride (GaN) powder was studied as a photocatalyst for overall water splitting. The
photocatalytic activity of GaN for the reaction was found to be strongly dependent on the …
photocatalytic activity of GaN for the reaction was found to be strongly dependent on the …
Far-field imaging of optical second-harmonic generation in single GaN nanowires
JP Long, BS Simpkins, DJ Rowenhorst… - Nano …, 2007 - ACS Publications
Means for assessing the nonlinear optical properties of nanoscale materials are of key
importance for the advancement of active nanophotonics. By correlating second-harmonic …
importance for the advancement of active nanophotonics. By correlating second-harmonic …
Femtosecond optical generation and detection of coherent acoustic phonons in GaN single crystals
S Wu, P Geiser, J Jun, J Karpinski, R Sobolewski - Physical Review B …, 2007 - APS
We report our experimental and theoretical studies on the time-resolved generation and
detection of coherent acoustic phonons (CAPs) in very high quality bulk GaN single crystals …
detection of coherent acoustic phonons (CAPs) in very high quality bulk GaN single crystals …
Time-resolved intervalley transitions in GaN single crystals
S Wu, P Geiser, J Jun, J Karpinski, D Wang… - Journal of applied …, 2007 - pubs.aip.org
We present a direct observation of time-resolved intervalley transitions of electrons between
the conduction band Γ and L valleys in GaN single crystals using a two-color (ultraviolet and …
the conduction band Γ and L valleys in GaN single crystals using a two-color (ultraviolet and …
基于MOVPE 和MBE 法生成的GaN 薄膜的反射, 透射光谱测量
齐学义, 李晨晨, 杨国来, 蔡丽霞 - 2007 - ir.lut.edu.cn
摘要使用紫外-可见光分光光度计, 研究用金属有机物气相外延(MOVPE) 方法生成在蓝宝石衬底
上的GaN 薄膜的反射光谱, 透射光谱以及用分子束外延(MBE) 方法生成在碳化硅衬底上GaN …
上的GaN 薄膜的反射光谱, 透射光谱以及用分子束外延(MBE) 方法生成在碳化硅衬底上GaN …
[PDF][PDF] Near infrared intersubband absorption and photovoltaic detection in GaN/AIN multi quantum well structures
E Baumann - 2007 - core.ac.uk
Due to the large conduction band offset of nearly 2eV between GaN and AlN, group III nitride
semiconductor heterostructures are of great interest for optoelectronics based on …
semiconductor heterostructures are of great interest for optoelectronics based on …
A-plane GaN shear wave thin film resonator
This paper focuses on metal-organic-vapor-phase-epitaxial (MOVPE) grown on a-plane
gallium-nitride (GaN), representing a novel approach for piezoelectric materials with good …
gallium-nitride (GaN), representing a novel approach for piezoelectric materials with good …
GaN MQW microdisks pivoted on Si substrate
HW Choi, BL Yang, PT Lai, P Chen… - … status solidi (a), 2007 - Wiley Online Library
The fabrication and characterization of GaN MQW microdisks pivoted on Si is reported in this
paper. The GaN microdisks were patterned by photolithography and dry‐etched. This is …
paper. The GaN microdisks were patterned by photolithography and dry‐etched. This is …
Phonon-assisted stimulated emission from pendeoepitaxy GaN stripes grown on 6H-SiC substrates
Phonon-assisted stimulated emission has been demonstrated by photopumping GaN stripes
grown via pendeoepitaxy on 6 H-Si C (0001) substrates. Transverse-electric-polarized …
grown via pendeoepitaxy on 6 H-Si C (0001) substrates. Transverse-electric-polarized …