The temperature dependence of the refractive indices of GaN and AlN was investigated in
the wavelength range from the near band edge (367 nm for GaN and 217 nm for AlN) to …

Vertically aligned gallium nitride (GaN) nanorod arrays grown by the catalyst-free, self-
organized method based on plasma-assisted molecular-beam epitaxy are shown to behave …

We have generated optical pulses at 405 nm from a single-transverse-mode GaInN blue
laser diode under intensive gain-switching operation with a minimum pulse duration of less …

Main objective of the present work is to develop wide-band gap InGaN solar cells in the 2.4–
2.9 eV range that can be an integral component of photovoltaic devices to achieve …

We report a pyrometer that operates at a mid-infrared wavelength range (7–8μm), where
sapphire substrates are opaque and the reactant gases are transparent. The pyrometer also …

GaN films have been deposited by reactive rf sputtering of GaAs target in 100% nitrogen
ambient on quartz substrates at different substrate temperatures ranging from room …

Interference effects in the spectra of the III-nitride epilayers can produce ambiguities and
misinterpretations. This problem has been addressed in the literature (eg [L. Siozade, J …

Nowadays, GaN-based multi-layer materials is developing fast, and it is important to know
their interface and optical properties for devices design and fabrication. In this letter, the …

We report our experimental and theoretical studies on the time-resolved dynamics of
conduction electrons and coherent acoustic phonons (CAPs) in high quality GaN single …

In this work, I studied the hybrid system based on self-assembled guanosine crystal (SAGC)
conjugated to wide-bandgap semiconductor gallium nitride (GaN). Guanosine is one of the …