The nowadays notable development of all the modern technology, fundamental for the
progress and well being of world society, imposes a great deal of stress in the realm of basic …

For the past three decades, power management efficiency and cost have shown steady
improvement as innovations in power MOSFET structures, technology, and circuit topologies …

Abstract The surface of AlGaN/GaN high-electron-mobility transistors (HEMTs) tends to be
easily damaged during device fabrication, especially during high-temperature annealing. In …

This thesis discusses III-Nitride materials and material systems on which HEMTs are based.
Own Monte Carlo simulations are supplemented by an extensive study of experimental and …

LiNbO 3 film (LNO)/AlGaN/GaN heterostructure was fabricated and its memory
characteristics were studied. The heterostructure exhibited a wide range clockwise …

Information on the energy band gaps, the lattice parameters and the lattice matching to
available substrates is a prerequisite for many practical applications. A pseudopotential …

Bu çalışmada Al (In) GaN/Ga (In) N iki boyutlu elektron gaz (2DEG) heteroyapıların iletim
özellikleri, deneysel ve teorik olarak çalışıldı. Deneysel kısımda ilk olarak örnekler metal …

Zusammenfassung Die Erweiterung des Anwendungsspektrums Mikroelektromechanischer
Systeme (MEMS) um das Einsatzgebiet der chemischen, biologischen, gasartspezifischen …

GaN-based heterostructure field effect transistors (HFETs) have gained considerable
attention in high-power microwave applications. So far, unsurpassed current levels and high …

To achieve high-speed nitride-based high electron mobility transistors (HEMTs), both lateral
and vertical scaling are required for future device fabrication. The large polarization …