Transparent thin film transistors based on indium oxide semiconductor

Vertically aligned In 2 O 3 nanorods on FTO substrates for photoelectrochemical applications

J Gan, X Lu, T Zhai, Y Zhao, S Xie, Y Mao… - Journal of Materials …, 2011 - pubs.rsc.org
Vertically aligned In2O3 nanorod arrays (NRAs) were obtained by annealing the as-
prepared In (OH) 3 precursors that grew directly on FTO substrates via a simple template …
被引用次数：61 相关文章

N-type oxide semiconductor thin-film transistors

P Barquinha, R Martins, E Fortunato - GaN and ZnO-based Materials and …, 2011 - Springer
This chapter gives an overview about GIZO TFTs, comprising an introductory section about
generic TFT structure and operation, different semiconductor technologies for TFTs–with …
被引用次数：6 相关文章 所有 4 个版本
[PDF] core.ac.uk

Filmes finos de óxidos metálicos estudo e aplicações

PMR Parreira - 2011 - search.proquest.com
Nesta dissertação são apresentados alguns estudos sobre diferentes óxidos metálicos:
Óxido de estanho (SnO x), óxido de índio (InO x), óxido de cobre (Cu x O) e óxido de titânio …
被引用次数：1 相关文章 所有 3 个版本