Experimental probing of exchange interactions between localized spins in the dilute magnetic insulator (Ga, Mn) N
The sign, magnitude, and range of the exchange couplings between pairs of Mn ions is
determined for (Ga, Mn) N and (Ga, Mn) N: Si with x≲ 3%. The samples have been grown by …
determined for (Ga, Mn) N and (Ga, Mn) N: Si with x≲ 3%. The samples have been grown by …
Green luminescence of InGaN nanowires grown on silicon substrates by molecular beam epitaxy
KD Goodman, VV Protasenko, J Verma… - Journal of Applied …, 2011 - pubs.aip.org
Indium gallium nitride nanowires show promise as being prime candidates for optical
devices since they can be grown with band gaps spanning the visible spectra, while at the …
devices since they can be grown with band gaps spanning the visible spectra, while at the …
Optical anisotropy and light extraction efficiency of MBE grown GaN nanowires epilayers
AL Henneghien, G Tourbot, B Daudin, O Lartigue… - Optics …, 2011 - opg.optica.org
The use of nanowires as active medium seems very promising for the development of high
brightness LEDs. With a lower effective refractive index than bulk, semiconductor nanowire …
brightness LEDs. With a lower effective refractive index than bulk, semiconductor nanowire …
PL and XPS study of radiation damage created by various slow highly charged heavy ions on GaN epitaxial layers
LQ Zhang, CH Zhang, J Gou, LH Han, YT Yang… - Nuclear Instruments and …, 2011 - Elsevier
Photoluminescence (PL) spectrum, in conjunction with X-ray photoelectron spectroscopy
(XPS) is used to evaluate the surface damage of GaN layer by highly-charged Xeq+ (18⩽ …
(XPS) is used to evaluate the surface damage of GaN layer by highly-charged Xeq+ (18⩽ …
Light extraction limits in textured GaN-InGaN light-emitting diodes: Radiative transfer analysis
O Heikkilä, J Oksanen, J Tulkki - Applied Physics Letters, 2011 - pubs.aip.org
We present a study on the light extraction properties of thin film light-emitting diodes (LEDs)
based on the radiative transfer theory. We show that the well known ergodic limit for …
based on the radiative transfer theory. We show that the well known ergodic limit for …
Spectroscopic ellipsometry studies of reactively sputtered nitrogen-rich GaAsN films
Nitrogen-rich GaAsN thin films have been deposited at 500° C by reactive rf sputtering of
GaAs target in argon–nitrogen atmosphere. The arsenic content of the films was varied by …
GaAs target in argon–nitrogen atmosphere. The arsenic content of the films was varied by …
[PDF][PDF] Optische eigenschaften von aluminium-galliumnitrid-halbleitern
M Röppischer - 2011 - depositonce.tu-berlin.de
In dieser Arbeit wurden grundlegende optische Eigenschaften von AlN, GaN und ihren
Mischkristallen vorgestellt und interpretiert. Spektrale Ellipsometrie in einem ausgedehnten …
Mischkristallen vorgestellt und interpretiert. Spektrale Ellipsometrie in einem ausgedehnten …
Lasing at exciton transition in optically pumped gallium nitride nanopillars
MH Lo, YJ Cheng, MC Liu, HC Kuo, SC Wang - Optics Express, 2011 - opg.optica.org
We report the observation of room temperature lasing action in optically pumped GaN
nanopillars. The nanopillars were fabricated by patterned etching and crystalline regrowth …
nanopillars. The nanopillars were fabricated by patterned etching and crystalline regrowth …
Thermo-optic coefficients of SiC, GaN, and AlN up to 512° C from infrared to ultraviolet region for tunable filter applications
The temperature dependence of the refractive indices of 4H-SiC, GaN, and AlN were
investigated in a wavelength range from the near band edge (392 nm for SiC, 367 nm for …
investigated in a wavelength range from the near band edge (392 nm for SiC, 367 nm for …
[PDF][PDF] GaN 薄膜的椭偏光谱研究
余养菁， 张斌恩， 李孔翌， 姜伟， 李书平… - Semiconductor …, 2011 - core.ac.uk
采用椭圆偏振光谱法, 在1. 50~ 6. 50 eV 光谱内, 研究了在蓝宝石衬底(0001)
面上使用金属有机化学气相沉积(MOCVD) 的方法制备的非掺杂纤锌矿结构GaN …
面上使用金属有机化学气相沉积(MOCVD) 的方法制备的非掺杂纤锌矿结构GaN …