In the last few years, there has been remarkable progress in the development of group III-
nitride based materials because of their potential application in fabricating various …

Power-switching devices require low on-state conduction losses, high-switching speed, high
thermal stability, and high input impedance. Using gallium nitride (GaN) based field-effect …

A GaN-based normally off heterostructure field effect transistor (HFET) with high current
density and with a quaternary InAlGaN barrier instead of an AlGaN barrier is investigated. It …

A new process approach to realize a slant field plate—a field plate (FP) gradually separated
from the semiconductor surface from the gate edge toward the drain—is reported. A …

We obtained single-crystalline semipolar (10 1¯ 3) GaN on a nominal Si (001) substrate with
sputtered AlN using the directional feature of sputtering. One dominated orientation of AlN …

This work reports on the design, epitaxial growth, and the structural, and optical
characterization of two types of nanostructures, namely AlGaN/AlN Stranski-Krastanov …

The main goal of this work was to develop the necessary expertise and model various
parameters and characteristics of gallium nitride power HEMT (High Electron Mobility …

One of the main advantages of nanowire structures is its ability to grow dislocation-free
crystal on a foreign substrate, which has been the major bottleneck for III-nitride planar …

抄録 Si-based electronics has reached an ultimate fabrication level (22 nm design rule),
which makes further progress hardly achieved. Therefore, 2D atomic layers including …