Conductive bridging random access memory—materials, devices and applications
MN Kozicki, HJ Barnaby - Semiconductor Science and …, 2016 - beta.iopscience.iop.org
We present a review and primer on the subject of conductive bridging random access
memory (CBRAM), a metal ion-based resistive switching technology, in the context of current …
memory (CBRAM), a metal ion-based resistive switching technology, in the context of current …
[图书][B] Graphene science handbook, six-volume set
Graphene is the strongest material ever studied and can be an efficient substitute for silicon.
This six-volume handbook focuses on fabrication methods, nanostructure and atomic …
This six-volume handbook focuses on fabrication methods, nanostructure and atomic …
Structural Phase Transition Effect on Resistive Switching Behavior of MoS2‐Polyvinylpyrrolidone Nanocomposites Films for Flexible Memory Devices
P Zhang, C Gao, B Xu, L Qi, C Jiang, M Gao, D Xue - Small, 2016 - Wiley Online Library
The 2H phase and 1T phase coexisting in the same molybdenum disulfide (MoS2)
nanosheets can influence the electronic properties of the materials. The 1T phase of MoS2 …
nanosheets can influence the electronic properties of the materials. The 1T phase of MoS2 …
A mechanistic study on graphene-based nonvolatile ReRAM devices
Nonvolatile resistive switching random access memory (ReRAM) devices have been of
critical importance in the recent information technology industry. A resistive switching …
critical importance in the recent information technology industry. A resistive switching …
Conductive graphitic channel in graphene oxide‐based memristive devices
Electrically insulating graphene oxide with various oxygen‐functional groups is a novel
material as an active layer in resistive switching memories via reduction process. Although …
material as an active layer in resistive switching memories via reduction process. Although …
[图书][B] Emerging Resistive Switching Memories
J Ouyang - 2016 - Springer
Memory devices with higher density and speed are required for information technology.
There are drawbacks to each of the three leading memories, that is, flash memories …
There are drawbacks to each of the three leading memories, that is, flash memories …
Nonvolatile memory devices based on poly (vinyl alcohol)+ graphene oxide hybrid composites
Y Sun, J Lu, C Ai, D Wen - Physical Chemistry Chemical Physics, 2016 - pubs.rsc.org
Nonvolatile memory devices based on active layers of poly (vinyl alcohol)(PVA)+ graphene
oxide (GO) hybrid composites have been fabricated. The performance of the ITO/PVA+ …
oxide (GO) hybrid composites have been fabricated. The performance of the ITO/PVA+ …
Non‐volatile ReRAM devices based on self‐assembled multilayers of modified graphene oxide 2D nanosheets
2D nanomaterials have been actively utilized in non‐volatile resistive switching random
access memory (ReRAM) devices due to their high flexibility, 3D‐stacking capability, simple …
access memory (ReRAM) devices due to their high flexibility, 3D‐stacking capability, simple …
[图书][B] Graphene science handbook: Applications and industrialization
Graphene is the strongest material ever studied and in the future may be an efficient
substitute for silicon. There is no other major reference work of this scope on the topic of …
substitute for silicon. There is no other major reference work of this scope on the topic of …
Fabricating in-plane transistor and memory using atomic force microscope lithography towards graphene system on chip
Recently, various electronic components including transistor, barristor, memory, and
transparent electrode were implemented using graphene. While integrated circuits were …
transparent electrode were implemented using graphene. While integrated circuits were …