We report lasing from nonpolar pin InGaN/GaN multi-quantum well core–shell single-
nanowire lasers by optical pumping at room temperature. The nanowire lasers were …

The effect of sapphire substrate's sidewall roughening on light extraction of AlGaN-based
ultraviolet light-emitting diodes (UV LEDs) is investigated. Finite-difference time-domain …

Modulating lasing wavelength flexibly and repeatedly on a single rod is essential to the
practical applications of micro/nanorod lasers. In this paper, a structure that decouples the …

Gallium nitride (GaN), a wide-bandgap III–V semiconductor material with a bandgap
wavelength λ_g= 366 nm (for Wurtzite GaN) and transparency window covering the visible …

We employ picosecond laser multiple scribing to fabricate oblique sidewalls of AlGaN-based
deep ultraviolet light-emitting diode (LED) chips for enhanced light extraction. The multiple …

Abstract Nanosized (NS) cobalt (II) bis (5-phenyl-azo-8-hydroxyquinolate)(NS Co (II)-(5PA-
8HQ) 2) thin films have been synthesized using static step-by-step soft surface reaction (SS …

In this work, we use conductance and contact potential difference photo-transient data to
study the influence of the growth technique, doping, and crystal polarity on the kinetics of …

We report the room-temperature anisotropic dielectric functions (DFs), refractive indices, and
absorption coefficients as well as birefringence and dichroism of wurtzite GaN in the spectral …

We demonstrated a monolithic GaN–InGaN core–shell nanorod lattice lasing under room
temperature. The threshold pumping density was as low as 140 kW/cm2 with a quality factor …

Nitride microcavities offer an exceptional platform for the investigation of light–matter
interactions as well as the development of devices such as high efficiency light emitting …