3D stacked multilayer semiconductor memory using doped select transistor channel
F Ootsuka - US Patent 10,090,316, 2018 - Google Patents
In 3D stacked multilayer semiconductor memories including NAND and NOR flash
memories, a lightly boron-doped layer is formed on top of a heavily boron-doped layer to …
memories, a lightly boron-doped layer is formed on top of a heavily boron-doped layer to …
Resistance change memory device and fabrication method thereof
F Chen - US Patent 10,103,325, 2018 - Google Patents
The resistance change memory device including a first resistance change memory element,
a second resistance change memory element, and a memory controller is provided. The first …
a second resistance change memory element, and a memory controller is provided. The first …