Manipulation of magnetization by spin–orbit torque

Y Li, KW Edmonds, X Liu, H Zheng… - Advanced Quantum …, 2019 - Wiley Online Library
The control of magnetization by electric current is a rapidly developing area motivated by a
strong synergy between breakthrough basic research discoveries and industrial applications …

Electric field control of Néel spin–orbit torque in an antiferromagnet

X Chen, X Zhou, R Cheng, C Song, J Zhang, Y Wu… - Nature materials, 2019 - nature.com
Electric field control of spin–orbit torque in ferromagnets has been intensively pursued in
spintronics to achieve efficient memory and computing devices with ultralow energy …

Tuning a binary ferromagnet into a multistate synapse with spin–orbit‐torque‐induced plasticity

Y Cao, AW Rushforth, Y Sheng… - Advanced Functional …, 2019 - Wiley Online Library
Ferromagnets with binary states are limited for applications as artificial synapses for
neuromorphic computing. Here, it is shown how synaptic plasticity of a perpendicular …

Chirally coupled nanomagnets

Z Luo, TP Dao, A Hrabec, J Vijayakumar, A Kleibert… - Science, 2019 - science.org
Magnetically coupled nanomagnets have multiple applications in nonvolatile memories,
logic gates, and sensors. The most effective couplings have been found to occur between …

Spin logic devices via electric field controlled magnetization reversal by spin-orbit torque

M Yang, Y Deng, Z Wu, K Cai… - IEEE Electron …, 2019 - ieeexplore.ieee.org
We describe a spin logic device with controllable magnetization switching of perpendicularly
magnetized ferromagnet/heavy metal structures on a ferroelectric (1-)[Pb (Mg 1/3 Nb 2/3) O …

Giant Enhancements of Perpendicular Magnetic Anisotropy and Spin‐Orbit Torque by a MoS2 Layer

Q Xie, W Lin, B Yang, X Shu, S Chen, L Liu… - Advanced …, 2019 - Wiley Online Library
Abstract 2D transition metal dichalcogenides have attracted much attention in the field of
spintronics due to their rich spin‐dependent properties. The promise of highly compact and …

A spin–orbit‐torque memristive device

S Zhang, S Luo, N Xu, Q Zou, M Song… - Advanced Electronic …, 2019 - Wiley Online Library
Memristors, demonstrated by solid‐state devices with continuously tunable resistance, have
emerged as a new paradigm for self‐adaptive networks that require synapse‐like functions …

Free field electric switching of perpendicularly magnetized thin film by spin current gradient

S Chen, J Yu, Q Xie, X Zhang, W Lin, L Liu… - … applied materials & …, 2019 - ACS Publications
To realize high-speed nonvolatile magnetic memory with low energy consumption, electric
switching of perpendicular magnetization by spin–orbit torque in the heavy …

Current‐enhanced broadband THz emission from spintronic devices

M Chen, Y Wu, Y Liu, K Lee, X Qiu, P He… - Advanced Optical …, 2019 - Wiley Online Library
An ultra‐broadband terahertz (THz) emitter covering a wide range of frequencies from 0.1 to
10 THz is highly desired for spectroscopy applications. So far, spintronic THz emitters have …

Spin-orbit-torque-driven multilevel switching in Ta/CoFeB/MgO structures without initialization

S Zhang, Y Su, X Li, R Li, W Tian, J Hong… - Applied Physics …, 2019 - pubs.aip.org
Spin-orbit torque (SOT) has been proposed as an alternative writing mechanism for the next-
generation magnetic random access memory (MRAM), due to its energy efficiency and high …