In this work, flip-chip AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) with
various meshed contact structures are systematically investigated via three-dimensional …

The capability of pristine and M-doped (M= Ti, Cr, Fe, Ni and Zn) gallium nitride nanosheets
(M-GaNNS) was explored at the Grimme-corrected PBE/double numerical plus polarization …

The nano-sized organic and inorganic materials are opening pathways for chemical flexible
composites that exhibits high advantage in their optical, electrical and mechanical …

The performance of AlGaN deep ultraviolet (UV) light emitting diodes (LEDs) has been
limited by the extremely low light extraction efficiency (LEE), which is due to the severe light …

The anisotropic extraction dependence of polarized light on propagation path in AlGaN-
based deep-ultraviolet (DUV) light-emitting diodes (LEDs) is investigated by simulations and …

ABSTRACT N-polar InN quantum dots and thin layers grown by metal organic chemical
vapor deposition were shown to exhibit tunable emission from around 1.00 lm to longer than …

We present a many-body perturbation theory study of the excitonic properties of wurtzite
GaN containing a single charged nitrogen vacancy. We determine that the lowest-energy …

We have performed a detailed study on the development of V-pits in low temperature GaN,
varying the temperature for different precursors and carrier gases, showing that the growth …

Infrared refractive index is an indispensable parameter for various fields including infrared
photonics. To date, critical-angle refractometers, V-block refractometers, and spectroscopic …

E эВ [1]), которую можно варьировать в твёрдых тройных растворах InxGa1-xN,
изменяя концентрацию индия x (ширина запрещённой зоны InN 0, 8 InN g E= эВ [1]) …