Recent developments in controlled vapor‐phase growth of 2D group 6 transition metal dichalcogenides

SY Kim, J Kwak, CV Ciobanu, SY Kwon - Advanced Materials, 2019 - Wiley Online Library
An overview of recent developments in controlled vapor‐phase growth of 2D transition metal
dichalcogenide (2D TMD) films is presented. Investigations of thin‐film formation …

Transfer methods of graphene from metal substrates: A review

LP Ma, W Ren, HM Cheng - Small Methods, 2019 - Wiley Online Library
Graphene synthesized by chemical vapor deposition (CVD) on metal substrates has
attracted tremendous attention due to its high growth‐quality, scalability, and high structural …

Thinnest nonvolatile memory based on monolayer h‐BN

X Wu, R Ge, PA Chen, H Chou, Z Zhang… - Advanced …, 2019 - Wiley Online Library
Abstract 2D materials have attracted much interest over the past decade in nanoelectronics.
However, it was believed that the atomically thin layered materials are not able to show …

Recent progress in the controlled synthesis of 2D metallic transition metal dichalcogenides

Z Zhang, P Yang, M Hong, S Jiang, G Zhao… - …, 2019 - iopscience.iop.org
Abstract Two-dimensional (2D) metallic transition metal dichalcogenides (MTMDCs), the
complement of 2D semiconducting TMDCs, have attracted extensive attentions in recent …

Multiple roles of a heterointerface in two-dimensional van der Waals heterostructures: insights into energy-related applications

Y Zhu, W Peng, Y Li, G Zhang, F Zhang… - Journal of Materials …, 2019 - pubs.rsc.org
Constructing two dimensional (2D) van der Waals (vdW) heterostructures is a promising
strategy to overcome the shortcomings of individual 2D materials without losing their intrinsic …

Toward the growth of high mobility 2D transition metal dichalcogenide semiconductors

H Li, JK Huang, Y Shi, LJ Li - Advanced Materials Interfaces, 2019 - Wiley Online Library
The development of integrated circuits greatly relies on the continuous dimension
downscaling in material size and thickness. However, the miniaturization of silicon‐based …

Salt-assisted growth of ultrathin GeSe rectangular flakes for phototransistors with ultrahigh responsivity

X Hu, P Huang, K Liu, B Jin, X Zhang… - … applied materials & …, 2019 - ACS Publications
Two-dimensional (2D) GeSe is an important IVA–VIA semiconductor for future applications
in electronics and optoelectronics because of its high absorption coefficient, mobility, and …

Microscopic insights into the catalytic mechanisms of monolayer MoS2 and its heterostructures in hydrogen evolution reaction

M Hong, J Shi, Y Huan, Q Xie, Y Zhang - Nano Research, 2019 - Springer
Exploring high-efficient catalysts for hydrogen evolution reaction (HER) has become very
urgent for resolving the energy related issues. Recently, two-dimensional layered MoS 2 …

Synthesis of sub-millimeter single-crystal grains of aligned hexagonal boron nitride on an epitaxial Ni film

AB Taslim, H Nakajima, YC Lin, Y Uchida, K Kawahara… - Nanoscale, 2019 - pubs.rsc.org
Hexagonal boron nitride (h-BN), an insulating two-dimensional (2D) layered material, has
attracted increasing interest due to its electrical screening effect, high-temperature-resistant …

Space-confined growth of monolayer ReSe2 under a graphene layer on Au foils

C Xie, S Jiang, X Zou, Y Sun, L Zhao, M Hong, S Chen… - Nano Research, 2019 - Springer
Vertical heterostructures based on two-dimensional (2D) materials have attracted
widespread interest for their numerous applications in electronic and optoelectronic devices …