Since the positive influences of defects on the performance of electroceramics were
discovered, investigations concerning on defects and aliovalent doping routes have grown …

Ferroelectricity in fluorite-structure oxides, such as (doped) HfO2 and ZrO2, and their solid
solution, nanolaminates, and superlattices has attracted increasing interest for future …

Discovery of robust yet reversibly switchable electric dipoles at reduced dimensions is
critical to the advancement of nanoelectronics devices. Energy bands flat in momentum …

Ferroelectric hafnium zirconium oxide holds great promise for a broad spectrum of
complementary metal–oxide–semiconductor (CMOS) compatible and scaled microelectronic …

The HfO 2-based ferroelectrics have aroused considerable attention due to their potential
application in silicon process-compatible memory devices. However, the ferroelectricity …

Ferroelectric materials are known to be ideal materials for nonvolatile memory devices,
owing to their two electrically switchable spontaneous polarization states. However …

Hafnia (HfO 2)-based thin films have promising applications in nanoscale electronic devices
due to their robust ferroelectricity and integration with silicon. Identifying and stabilizing the …

Auxetic materials are characterized by a negative Poisson's ratio that they expand laterally
in the directions perpendicular to the applied stretching stress and vice versa. Piezoelectrics …

The discovery of ferroelectric polarization in Hf O 2-based ultrathin films has spawned much
interest due to their potential applications in data storage. In 2018, an R 3 m rhombohedral …

In this work, the results of first-principles density-functional-theory calculations are used to
construct the energy landscapes of HfO 2 and its Y and Zr substituted derivatives as a …