Provided is a substrate processing method capable of preventing over-etching of a part of a
stair-case structure due to an etching solution, when a barrier layer is selectively formed on …

A method for forming a semiconductor device structure is disclosure. The method may
include, depositing an NMOS gate dielectric and a PMOS gate dielectric over a semicon …

Methods for forming a transition metal nitride film on a substrate by atomic layer deposition
and related semiconductor device structures are provided. In some embodiments, methods …

A method for depositing a metal film onto a substrate is disclosed. In particular, the method
comprises pulsing a metal halide precursor onto the substrate and pulsing a decaborane …

The invention relates to depositing a layer on a substrate in a reactor, by: introducing a first
precursor comprising a silicon halide in the reactor; introducing a second precursor in the …

A method for depositing an oxide film on a substrate by thermal ALD and PEALD, includes:
providing a substrate in a reaction chamber; depositing a first oxide film on the substrate by …

Provided is a method of depositing a thin film on a pattern structure of a semiconductor
substrate, the method including (a) supplying a source gas;(b) supplying a reactive gas; and …

(57) ABSTRACT A method of processing a substrate by omitting a photo lithographic
process is disclosed. The method includes forming at least one layer on a stepped structure …

A chemical dispensing apparatus for providing a chlorine vapor to a reaction chamber is
disclosed. The chemical dispensing apparatus may include: a chemical storage vessel …

A gas distribution system, a reactor system including the gas distribution system, and
method of using the gas distribution system and reactor system are disclosed. The gas …