Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories
Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …
in the memory arena over the last two decades. Its dielectric properties have been …
Ferroelectric field-effect transistors based on HfO2: a review
H Mulaosmanovic, ET Breyer, S Dünkel, S Beyer… - …, 2021 - iopscience.iop.org
In this article, we review the recent progress of ferroelectric field-effect transistors (FeFETs)
based on ferroelectric hafnium oxide (HfO 2), ten years after the first report on such a device …
based on ferroelectric hafnium oxide (HfO 2), ten years after the first report on such a device …
Emergent ferroelectricity in subnanometer binary oxide films on silicon
The critical size limit of voltage-switchable electric dipoles has extensive implications for
energy-efficient electronics, underlying the importance of ferroelectric order stabilized at …
energy-efficient electronics, underlying the importance of ferroelectric order stabilized at …
Highly enhanced ferroelectricity in HfO2-based ferroelectric thin film by light ion bombardment
Continuous advancement in nonvolatile and morphotropic beyond-Moore electronic devices
requires integration of ferroelectric and semiconductor materials. The emergence of hafnium …
requires integration of ferroelectric and semiconductor materials. The emergence of hafnium …
Scale-free ferroelectricity induced by flat phonon bands in HfO2
Discovery of robust yet reversibly switchable electric dipoles at reduced dimensions is
critical to the advancement of nanoelectronics devices. Energy bands flat in momentum …
critical to the advancement of nanoelectronics devices. Energy bands flat in momentum …
Ferroelectric transistors for memory and neuromorphic device applications
Ferroelectric materials have been intensively investigated for high‐performance nonvolatile
memory devices in the past decades, owing to their nonvolatile polarization characteristics …
memory devices in the past decades, owing to their nonvolatile polarization characteristics …
Kinetically stabilized ferroelectricity in bulk single-crystalline HfO2:Y
HfO2, a simple binary oxide, exhibits ultra-scalable ferroelectricity integrable into silicon
technology. This material has a polymorphic nature, with the polar orthorhombic (Pbc 21) …
technology. This material has a polymorphic nature, with the polar orthorhombic (Pbc 21) …
HfO2-based ferroelectrics: From enhancing performance, material design, to applications
Nonvolatile memories are in strong demand due to the desire for miniaturization, high-speed
storage, and low energy consumption to fulfill the rapid developments of big data, the …
storage, and low energy consumption to fulfill the rapid developments of big data, the …
Defects and aliovalent doping engineering in electroceramics
Y Feng, J Wu, Q Chi, W Li, Y Yu, W Fei - Chemical reviews, 2020 - ACS Publications
Since the positive influences of defects on the performance of electroceramics were
discovered, investigations concerning on defects and aliovalent doping routes have grown …
discovered, investigations concerning on defects and aliovalent doping routes have grown …
[HTML][HTML] Roadmap on ferroelectric hafnia-and zirconia-based materials and devices
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …
over the last decade, pushing them to the forefront of ultralow-power electronic systems …