In order to provide a quantitatively accurate description of the band-gap variation with sizes
in various II-VI semiconductor nanocrystals, we make use of the recently reported tight …

Based on a thermodynamic model for size-dependent melting temperature, the size-
dependent band-gap of low dimensional semiconductor compounds is modeled without any …

Abstract PbSx thin films (x= 1, 0.9, 0.8, 0.7, 0.6) were prepared onto glass substrates using
spin coating method. The phases developed and vacancies created in the different films …

Pure and calcium doped lead sulfide (PbS) thin films were prepared by chemical bath
deposition (CBD) method. The effects of calcium doping content on their structural …

Tin selenide thin films have been prepared by selenization of sputtered tin layers and have
been analyzed comparatively onto bare and SnO2‐coated glass substrates. In particular, the …

Nanocrystalline CdTe was prepared by mechanical alloying using Te and Cd equiatomic
powder mixture slightly oxidized due air exposition (6% α-TeO2 and 10% CdO …

The bandgap value of the thin films of Pb1-xCdxS could be tailored between 3.7 and 2.59
eV by adjusting the value of doping parameter 0.0≤ x≤ 1.0. Ultra-thin films of average …

CdTe/CdSe heterostructure multilayer thin films and single layers of CdSe and CdTe thin
films were prepared. Sequential thermal evaporation technique is made possible to adjust …

The photoluminescence spectra of spherical CdTe nanocrystals with zincblende structure
are studied by size-selective spectroscopic techniques. We observe a resonant Stokes shift …

The electronic structure of crystalline CdTe, CdO, α− TeO 2, CdTeO 3, and Cd 3 TeO 6 is
studied by means of first principles calculations. The band structure, total and partial density …