InAs/(In, Ga) Sb type‐II strained layer superlattices (T2SLs) have made significant progress
since they were first proposed as an infrared (IR) sensing material more than three decades …

Abstract InAs/(In, Ga) Sb Strained Layer Superlattices (SLSs) have made significant
progress since they were first proposed as an infrared (IR) sensing material more than three …

Publisher Summary This chapter provides an overview of type-II superlattice infrared
detectors. The type-II InAs/GaSb superlattices have several fundamental properties that …

The barrier layer in InAs/GaSb LWIR nBn detector is usually composed of AlGaSb alloy,
which has a non-negligible valence band offset and is sensitive to chemical solutions. In this …

We have investigated various passivation techniques for type-II InAs/GaSb strained layer
superlattice (SLS) detectors with pin and PbIbN designs with a 100%-cut-off wavelength of∼ …

In this paper, we present an InAs/GaSb type-II superlattice (SL) with the M-structure for the
fabrication of a long-wavelength (10 μm range) infrared (LWIR) focal plane arrays (FPA) …

We systematically investigated the molecular beam epitaxy (MBE) growth of nBn mid-
wavelength photodetectors based on type II InAs/InAsSb superlattice (T2SL) with a lattice …

The etching and passivation processes of very long wavelength infrared (VLWIR) detector
based on the InAs/GaSb/AlSb type-II superlattice have been studied. By studying the effect …

Manufacturing high-quality very long-wavelength infrared detectors (VLWIR) on GaSb
substrate is significant for advancing the superlattices application in the field of infrared …

Wet chemical etching of InAs-based InAs/Ga (As) Sb superlattice long wavelength infrared
photodiodes was studied in this paper. The etching experiments using citric acid …