Spin-polarized light sources are a new class of devices in which the radiative recombination
of spin-polarized carriers results in luminescence exhibiting a net circular polarization. The …

The gain spectrum and modulation characteristics of ridge-waveguide laser diodes with
InAs/GaAs submonolayer (SML) stacks have been investigated in detail. A comparison …

In this chapter we outline major principles of vertical-cavity surface-emitting laser (VCSEL)
design and operation. Basic device properties and generally applicable cavity design rules …

Quantum-dot (QD) lasers provide superior lasing characteristics compared to quantum-well
(QW) and QW wire lasers due to their delta like density of states. Record threshold current …

A highly important area where semiconductors and semimetals technology plays a major
role is that of optical Sensing devices. Receiving initial impetus because of infrared detector …

The physics of carrier recombinations in III-nitride light emitters are reviewed, with an
emphasis on experimental investigations. After a discussion of various methods of …

We present gain measurements and calculations for InAs/GaAs quantum dot injection
lasers. Measurements of the modal gain and estimation of the confinement factor by …

At the heart of electrically driven semiconductors lasers lies their gain medium that typically
comprises epitaxially grown double heterostuctures or multiple quantum wells. The …

We investigate the impact of reduced photon lifetime on the static and dynamic performance
of high-speed, oxide-confined 850-nm vertical-cavity surface-emitting lasers (VCSELs). The …

Semiconductor heterostructures with self-organized quantum dots (QDs) have
experimentally exhibited properties expected for zero-dimensional systems. When used as …