This paper presents an apparatus and methodology for an advanced accelerated power
cycling test of insulated-gate bipolar transistor (IGBT) modules. In this test, the accelerated …

Wire-bond lift-off and Solder fatigue are degradation mechanisms that dominate the lifetime
of power semiconductor packages. Although their lifetime is commonly estimated at the …

This paper presents the short-circuit behavior and degradation of 650-V/60-A enhancement-
mode Gallium nitride (GaN) high electron mobility transistors (HEMTs) under various test …

A degradation model investigating the electro-thermo-mechanical fatigue, experienced by
insulated gate bipolar transistors modules, is presented. To illustrate the concept, a specific …

Wide band gap (WBG) semiconductors require packaging with reduced parasitic inductance
and capacitance. To achieve this, new packaging solutions are proposed that increase …

As core components of power converters, the insulated gate bipolar transistor (IGBT) module
is required to have long-term reliability in increasingly more applications. To assess and …

Lift-off of aluminum bond wires is one of the main failure mechanisms of insulated gate
bipolar transistor (IGBT) modules. Its root cause is the crack propagation, which causes …

The emerging 650 V large current rating, Enhancement-mode (E-mode) Gallium Nitride
High-Electron-Mobility Transistor (GaN HEMT) is a promising device for low to medium …

In this study a high frequency mechanical fatigue testing procedure for evaluation of
interfacial reliability of heavy wire bonds in power semiconductors is presented. A …

The study presented in this paper contributes to the quantification of the correlations
between resistance degradation and Al metallization layer reconstruction observed in high …