Field-free magnetization switching is critical towards practical, integrated spin-orbit torque
(SOT)-driven magnetic random-access memory with perpendicular magnetic anisotropy. Our …

The influence of Re layer insertion either at the bottom or top interface of epitaxially grown
Pt/Co/Pt heterostructures on their static and dynamic magnetic properties is discussed in …

We investigate the origin of spin-orbit torques (SOTs) in archetypical Pt/Co/MgO thin films
structures by performing harmonic Hall measurements. The behavior of the dampinglike …

The influence of the Co-and W-layer stacking sequence and the Co-layer thickness d Co on
the magnetization precession and damping and magnetic anisotropy is investigated using …

Reducing critical current density (JC) of current-driven magnetization switching via power-
efficient spin–orbit torque (SOT) is a key challenge in spin-based memory and logic devices …

Exchange bias is applied ubiquitously throughout the spintronics industry for pinning
magnetic moment in an orientation robust against external magnetic field disturbances …

The interplay between the interfacial crystalline structure and Dzyaloshinskii–Moriya
interaction (DMI) was investigated by Fe insertion in epitaxial Pt/Co/Ir perpendicular …

Based on computer simulation and the analysis of technological, experimental, and
theoretical results, the technological requirements for the formation of electronic devices …

На основании компьютерного моделирования и анализа технологических,
экспериментальных и теоретических результатов сформулированы технологические …

Рассматриваются экспериментальные, технологические и теоретические
закономерности формирования и изменения положения магнитных вихревых структур …