Micro light-emitting diodes

K Behrman, I Kymissis - Nature Electronics, 2022 - nature.com
Micro light-emitting diodes (microLEDs) are an emerging directly emissive display
technology. Compared with organic LED and liquid-crystal displays, microLED displays offer …

ZnO nanostructures for optoelectronics: Material properties and device applications

AB Djurišić, AMC Ng, XY Chen - Progress in quantum electronics, 2010 - Elsevier
In recent years, there has been increasing interest in ZnO nanostructures due to their variety
of morphologies and availability of simple and low cost processing. While there are still …

GaAs/AlGaAs core multishell nanowire-based light-emitting diodes on Si

K Tomioka, J Motohisa, S Hara, K Hiruma, T Fukui - Nano letters, 2010 - ACS Publications
We report on integration of GaAs nanowire-based light-emitting-diodes (NW-LEDs) on Si
substrate by selective-area metalorganic vapor phase epitaxy. The vertically aligned …

p-Type modulation doped InGaN/GaN dot-in-a-wire white-light-emitting diodes monolithically grown on Si (111)

HPT Nguyen, S Zhang, K Cui, X Han… - Nano …, 2011 - ACS Publications
Full-color, catalyst-free InGaN/GaN dot-in-a-wire light-emitting diodes (LEDs) were
monolithically grown on Si (111) by molecular beam epitaxy, with the emission …

Flexible inorganic nanostructure light‐emitting diodes fabricated on graphene films

CH Lee, YJ Kim, YJ Hong, SR Jeon, S Bae, BH Hong… - Advanced …, 2011 - infona.pl
Flexible inorganic nanostructure light‐emitting diodes (LEDs) are fabricated using high‐
quality GaN/ZnO coaxial nanorod heterostructures grown directly on large graphene films …

Assembly of one dimensional inorganic nanostructures into functional 2D and 3D architectures. Synthesis, arrangement and functionality

RK Joshi, JJ Schneider - Chemical Society Reviews, 2012 - pubs.rsc.org
This review will focus on the synthesis, arrangement, structural assembly, for current and
future applications, of 1D nanomaterials (tubes, wires, rods) in 2D and 3D ordered …

Nearly single-crystalline GaN light-emitting diodes on amorphous glass substrates

JH Choi, A Zoulkarneev, SI Kim, CW Baik, MH Yang… - Nature …, 2011 - nature.com
Single-crystalline GaN-based light-emitting diodes (s-LEDs) on crystalline sapphire wafers
can provide point-like light sources with high conversion efficiency and long working …

III–V nanowires on Si substrate: selective-area growth and device applications

K Tomioka, T Tanaka, S Hara… - IEEE Journal of …, 2010 - ieeexplore.ieee.org
III-V nanowires (NWs) on Si are promising building blocks for future nanoscale electrical and
optical devices on Si platforms. We present position-controlled and orientation-controlled …

Selective-area growth of III-V nanowires and their applications

K Tomioka, K Ikejiri, T Tanaka, J Motohisa… - Journal of Materials …, 2011 - cambridge.org
We review the position-controlled growth of III-V nanowires (NWs) by selective-area metal-
organic vapor-phase epitaxy (SA-MOVPE). This epitaxial technique enables the positioning …

[HTML][HTML] Growth and characterizations of GaN micro-rods on graphene films for flexible light emitting diodes

K Chung, H Beak, Y Tchoe, H Oh, H Yoo, M Kim, GC Yi - Apl Materials, 2014 - pubs.aip.org
We report the growth of GaN micro-rods and coaxial quantum-well heterostructures on
graphene films, together with structural and optical characterization, for applications in …