Ferroelectricity of HfxZr1− xO2 thin films fabricated by 300 C low temperature process with plasma-enhanced atomic layer deposition
T Onaya, T Nabatame, N Sawamoto, A Ohi… - Microelectronic …, 2019 - Elsevier
We investigated the characteristics of 10-nm-thick ferroelectric Hf 0.43 Zr 0.57 O 2 (HZO) thin
films fabricated using plasma-enhanced atomic layer deposition (PE-ALD) at 300° C with …
films fabricated using plasma-enhanced atomic layer deposition (PE-ALD) at 300° C with …
Defect engineering borophene/bismuthene/MXene/black phosphorus van der Waals laminations for sensitive photoelectrochemical-electrostatic sensors
W Zeng, A Gui, Y Wang, Z Zhang, L Deng, Y Tian… - Applied Surface …, 2024 - Elsevier
Abstract Nowadays, the two-dimensional (2D) materials have shown broad prospects for
their fascinating attributes, yet the ineluctable material defects still restrict their applications …
their fascinating attributes, yet the ineluctable material defects still restrict their applications …
The Influence of Annealing Temperature on the Structural and Optical Properties of ZrO2 Thin Films and How Affects the Hydrophilicity
Zirconium oxide (ZrO2) thin films were prepared by the sol-gel dip coating technique, in
combination with annealing at different temperatures in air atmosphere, with the final goal of …
combination with annealing at different temperatures in air atmosphere, with the final goal of …
Exploration of ZrO2-shelled nanowires for chemiresistive detection of NO2 gas
We present novel research devoted to the synthesis of SnO 2-ZrO 2 core-shell nanowires
(CS NWs) and investigation of their NO 2 gas sensing properties. ZrO 2 shell layer was …
(CS NWs) and investigation of their NO 2 gas sensing properties. ZrO 2 shell layer was …
Influence of substrate bias voltage on structure, mechanical and corrosion properties of ZrO2 thin films deposited by Reactive Magnetron Sputter Deposition
Zirconium oxide (ZrO 2) thin films were grown onto 316L stainless steel by radio frequency
magnetron sputtering (RFMS), at different substrate DC bias voltages (from 0 to− 100 V). The …
magnetron sputtering (RFMS), at different substrate DC bias voltages (from 0 to− 100 V). The …
Ultra-thin ZrO2 overcoating on CuO-ZnO-Al2O3 catalyst by atomic layer deposition for improved catalytic performance of CO2 hydrogenation to dimethyl ether
An ultra-thin overcoating of zirconium oxide (ZrO 2) film on CuO-ZnO-Al 2 O 3 (CZA)
catalysts by atomic layer deposition (ALD) was proved to enhance the catalytic performance …
catalysts by atomic layer deposition (ALD) was proved to enhance the catalytic performance …
Effects of oxygen sources on properties of atomic-layer-deposited ferroelectric hafnium zirconium oxide thin films
Abstract Orthorhombic Hf x Zr 1-x O 2 (HZO) is a promising ferroelectric material for realizing
ferroelectric devices in the modern semiconductor industry because of its excellent CMOS …
ferroelectric devices in the modern semiconductor industry because of its excellent CMOS …
Improvement of Voltage Linearity and Leakage Current of MIM Capacitors With Atomic Layer Deposited Ti-Doped ZrO2 Insulators
G Zheng, YL He, B Zhu, X Wu… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
MIM capacitors have been widely investigated as passive devices in integrated circuits. In
this work, Ti-doped ZrO2 (ZTO) thin films prepared by plasma-enhanced atomic layer …
this work, Ti-doped ZrO2 (ZTO) thin films prepared by plasma-enhanced atomic layer …
Al2O3 blocking layer inserted ZrO2 metal-insulator-metal capacitor for the improved electrical and interfacial properties
Atomic layer deposition with O 3 reactant is widely used to deposit thin and conformal films
in a ZrO 2 based metal-insulator-metal (MIM) capacitor. Post-deposition annealing (PDA) …
in a ZrO 2 based metal-insulator-metal (MIM) capacitor. Post-deposition annealing (PDA) …
Hybrid reactant-enabled atomic layer deposition of HfO2 for enhancing metal-insulator-metal capacitor fabricated on TiN electrode
IG Lee, WY Park, YU Ryu, W Jeon - Materials Today Communications, 2024 - Elsevier
Dynamic random access memory (DRAM) capacitors rely on the high-performance of metal-
insulator-metal (MIM) structures for stable operation. Among the materials investigated for …
insulator-metal (MIM) structures for stable operation. Among the materials investigated for …