Semiconductor systems and methods may include a semiconductor processing chamber
having a gas box defining an access to the semiconductor processing chamber. The …

Semiconductor systems and methods may include a semi conductor processing chamber
having a gas box defining an access to the semiconductor processing chamber. The cham …

3, 969077 4006047 4, 190488 4.209. 357 4,214,946 4, 232060 4.234. 628 4,265.943
4,340,462 4,341,592 4,361,418 4,364,803 4,368.223 4, 374698 4,381,441 4,397,812 …

Embodiments of the present invention pertain to methods of forming more symmetric
spacers which may be used for self-aligned multi-patterning processes. A conformal spacer …

Described processing chambers may include a chamber housing at least partially defining
an interior region of the semiconductor processing chamber. The chambers may include a …

Methods are described herein for etching metal films which are difficult to volatize. The
methods include exposing a metal film to a chlorine-containing precursor (eg Cl). Chlo rine …

(57) ABSTRACT A methodofetching carbon films on patterned heterogeneous structures is
described and includes a gas phase etch using remote plasma excitation. The remote …

An exemplary system may include a chamber configured to contain a semiconductor
substrate in a processing region of the chamber. The system may include a first remote …

(57) ABSTRACT A method of etching doped silicon oxide on patterned hetero geneous
structures is described and includes a gas phase etch using partial remote plasma …

Methods are described for forming “air gaps” between adjacent metal lines on patterned
substrates. The common name “air gap” will be used interchangeably with the more …