Impact of Nitridation on Bias Temperature Instability and Hard Breakdown Characteristics of SiON MOSFETs
We study how nitridation, applied to SiON gate layers, impacts the reliability of planar metal-
oxide-semiconductor field effect transistors (MOSFETs) subjected to negative and positive …
oxide-semiconductor field effect transistors (MOSFETs) subjected to negative and positive …
Simulation study on the optimization and scaling behavior of LDMOS transistors for low-voltage power applications
We present a systematic investigation of device optimization for laterally diffused metal-
oxide-semiconductor (LDMOS) field-effect transistors in terms of subthreshold leakage …
oxide-semiconductor (LDMOS) field-effect transistors in terms of subthreshold leakage …
Building blocks of past, present and future BCD technologies
F Hébert, P Parvarandeh, M Li, G Zhang… - … Devices and ICs …, 2021 - ieeexplore.ieee.org
The critical building blocks that have enabled high-performance and high-reliability BCD
technologies optimized for power management applications over the past 30 years are …
technologies optimized for power management applications over the past 30 years are …
Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range
We develop a compact physics model for hot-carrier degradation (HCD) that is valid over a
wide range of gate and drain voltages (V gs and V ds, respectively). Special attention is paid …
wide range of gate and drain voltages (V gs and V ds, respectively). Special attention is paid …
DC to AC Analysis of HC vs. BTI damage in N-EDMOS used in Single Photon Avalanche Diode cell
H Pitard, A Bravaix, X Federspiel, R Fillon… - Microelectronics …, 2023 - Elsevier
Abstract N-channel Extended Drain Metal Oxide Semiconductor (EDMOS) device is
analysed through its sensitivity to Hot-Carrier (HC), hot hole (HH) injections and Positive …
analysed through its sensitivity to Hot-Carrier (HC), hot hole (HH) injections and Positive …
Algorithmic optimization of transistors applied to silicon LDMOS
We propose a pioneering approach that integrates optimization algorithms and technology
computer-aided design to automatically optimize laterally-diffused metal-oxide …
computer-aided design to automatically optimize laterally-diffused metal-oxide …
A compact physics analytical model for hot-carrier degradation
We develop and validate a fully analytical model for hot-carrier degradation based on a
thorough description of the physical picture behind this reliability phenomenon. This …
thorough description of the physical picture behind this reliability phenomenon. This …
Hot-carrier degradation in power LDMOS: Drain bias dependence and lifetime evaluation
AN Tallarico, S Reggiani, R Depetro… - … on Electron Devices, 2018 - ieeexplore.ieee.org
In this brief, we present an analysis of the degradation induced by hot-carrier stress in new
generation power lateral double-diffused MOSFET (LDMOS) transistors. When a relatively …
generation power lateral double-diffused MOSFET (LDMOS) transistors. When a relatively …
A novel 'IV spectroscopy'technique to deconvolve threshold voltage and mobility degradation in LDMOS transistors
Although the CMOS-compatible Laterally Diffused MOSFET (LDMOS) is widely used in
various applications as a versatile and efficient power electronic device, its hot carrier …
various applications as a versatile and efficient power electronic device, its hot carrier …
LDMOS drift region with field oxides: Figure-of-merit derivation and verification
We analytically and numerically investigate the performance of Laterally-Diffused Metal-
Oxide-Semiconductor (LDMOS) transistors with Semi-circular Field OXide (S-FOX) focusing …
Oxide-Semiconductor (LDMOS) transistors with Semi-circular Field OXide (S-FOX) focusing …