Silicon carbide has recently surged as an alternative material for scalable and integrated
quantum photonics, as it is a host for naturally occurring color centers within its bandgap …

The widespread use of 4H silicon carbide (4H-SiC) is just around the corner since high-
power electronics based on 4H-SiC are increasingly fabricated to enable the low-carbon …

This paper reviews the feasibility of the state-of-the-art electrical techniques adopted from Si
technology for characterization of SiC MOS devices. The inability of these conventional …

Wide Band Gap (WBG) semiconductors provide superior material qualities that could allow
for the functioning of prospective power devices at higher temperatures, voltages, and …

Recently, with research and development of SiC power devices, 1.2 kV SiC MOSFETs have
become commercially available. The parasitic parameters, such as output capacitance, in …

An ultra-low specific on-resistance 4H-SiC power laterally diffused metal oxide
semiconductor (LDMOS) device is proposed for 1200V-class applications. In the proposed …

Recently, with research and development of SiC power devices, 1.2-V SiC MOSFETs have
become commercially available. Over 3.3-kV SiC-MOSFETs have also been developed; …

Silicon carbide based semiconductor electronic devices and circuits are presently being
developed for use in high-temperature, high-power, and high-radiation conditions under …

Based on the insight that the Fermi level in a metal–oxide–semiconductor field-effect
transistor (MOSFET) channel is set in the conduction band, due to the quantum confinement …

The irradiation and annealing responses of 4H-SiC MOS devices with nitrided oxides are
investigated at varying biases. Radiation-induced hole trapping dominates the radiation …