[HTML][HTML] Silicon carbide color centers for quantum applications
S Castelletto, A Boretti - Journal of Physics: Photonics, 2020 - iopscience.iop.org
Silicon carbide has recently surged as an alternative material for scalable and integrated
quantum photonics, as it is a host for naturally occurring color centers within its bandgap …
quantum photonics, as it is a host for naturally occurring color centers within its bandgap …
Impurities and defects in 4H silicon carbide
R Wang, Y Huang, D Yang, X Pi - Applied Physics Letters, 2023 - pubs.aip.org
The widespread use of 4H silicon carbide (4H-SiC) is just around the corner since high-
power electronics based on 4H-SiC are increasingly fabricated to enable the low-carbon …
power electronics based on 4H-SiC are increasingly fabricated to enable the low-carbon …
Electrical characterization of SiC MOS capacitors: A critical review
This paper reviews the feasibility of the state-of-the-art electrical techniques adopted from Si
technology for characterization of SiC MOS devices. The inability of these conventional …
technology for characterization of SiC MOS devices. The inability of these conventional …
Wide band gap semiconductor devices for power electronic converters
SMSH Rafin, R Ahmed… - 2023 Fourth International …, 2023 - ieeexplore.ieee.org
Wide Band Gap (WBG) semiconductors provide superior material qualities that could allow
for the functioning of prospective power devices at higher temperatures, voltages, and …
for the functioning of prospective power devices at higher temperatures, voltages, and …
Digital control based voltage balancing for series connected SiC MOSFETs under switching operations
K Shingu, K Wada - 2017 IEEE Energy Conversion Congress …, 2017 - ieeexplore.ieee.org
Recently, with research and development of SiC power devices, 1.2 kV SiC MOSFETs have
become commercially available. The parasitic parameters, such as output capacitance, in …
become commercially available. The parasitic parameters, such as output capacitance, in …
A 1200-V-class ultra-low specific on-resistance SiC lateral MOSFET with double trench gate and VLD technique
M Kong, Z Hu, J Gao, Z Chen… - IEEE Journal of the …, 2021 - ieeexplore.ieee.org
An ultra-low specific on-resistance 4H-SiC power laterally diffused metal oxide
semiconductor (LDMOS) device is proposed for 1200V-class applications. In the proposed …
semiconductor (LDMOS) device is proposed for 1200V-class applications. In the proposed …
Voltage balancing control for series connected MOSFETs based on time delay adjustment under start-up and steady-state operations
K Wada, K Shingu - 2018 IEEE Energy Conversion Congress …, 2018 - ieeexplore.ieee.org
Recently, with research and development of SiC power devices, 1.2-V SiC MOSFETs have
become commercially available. Over 3.3-kV SiC-MOSFETs have also been developed; …
become commercially available. Over 3.3-kV SiC-MOSFETs have also been developed; …
Silicon carbide technology
PG Neudeck - 2006 - ntrs.nasa.gov
Silicon carbide based semiconductor electronic devices and circuits are presently being
developed for use in high-temperature, high-power, and high-radiation conditions under …
developed for use in high-temperature, high-power, and high-radiation conditions under …
Energy position of the active near-interface traps in metal–oxide–semiconductor field-effect transistors on 4H–SiC
D Haasmann, S Dimitrijev - Applied Physics Letters, 2013 - pubs.aip.org
Based on the insight that the Fermi level in a metal–oxide–semiconductor field-effect
transistor (MOSFET) channel is set in the conduction band, due to the quantum confinement …
transistor (MOSFET) channel is set in the conduction band, due to the quantum confinement …
Effects of bias on the irradiation and annealing responses of 4H-SiC MOS devices
CX Zhang, EX Zhang, DM Fleetwood… - … on Nuclear Science, 2011 - ieeexplore.ieee.org
The irradiation and annealing responses of 4H-SiC MOS devices with nitrided oxides are
investigated at varying biases. Radiation-induced hole trapping dominates the radiation …
investigated at varying biases. Radiation-induced hole trapping dominates the radiation …