Comprehensive investigation of electrical and optical characteristics of InGaN-based flip-chip micro-light-emitting diodes
Micro-light-emitting diodes (micro-LEDs) have been regarded as the important next-
generation display technology, and a comprehensive and reliable modeling method for the …
generation display technology, and a comprehensive and reliable modeling method for the …
Influence of growth temperature and miscut angle of m-plane sapphire substrate on the semi-polar (11–22) AlN film grown by HVPE
S Maosong, L Ting, L Yong, T Shuxin, L Xu… - Frontiers in …, 2022 - frontiersin.org
The high-quality semi-polar (11-22) AlN thin films were grown on m-plane sapphire
substrates by hydride vapor phase epitaxy (HVPE). The surface morphology and crystalline …
substrates by hydride vapor phase epitaxy (HVPE). The surface morphology and crystalline …
Numerical simulations of heterojunction GaN nanopillar light emitting diodes
The paper deals with numerical modeling of electrothermal phenomena in 3D GaN core-
shell light-emitting diode (LED) structures that were developed in the frame of GECCO …
shell light-emitting diode (LED) structures that were developed in the frame of GECCO …