Alternative Spectral Photoresponse in a p-Cu2ZnSnS4/n-GaN Heterojunction Photodiode by Modulating Applied Voltage

G Yang, YF Li, B Yao, ZH Ding, R Deng… - … applied materials & …, 2015 - ACS Publications
We report alternative visible and ultraviolet light response spectra in a p-Cu2ZnSnS4 (p-
CZTS)/n-GaN heterojunction photodiode. A CZTS film was deposited on an n-GaN/sapphire …

Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3 plasma pretreatment

H Hao, X Chen, Z Li, Y Shen, H Wang… - Journal of …, 2019 - iopscience.iop.org
High quality gallium oxide (Ga 2 O 3) thin films are deposited by remote plasma-enhanced
atomic layer deposition (RPEALD) with trimethylgallium (TMG) and oxygen plasma as …

Highly Reflective Periodic Nanostructure Based on Thermal Evaporated Tungsten Oxide and Calcium Fluoride for Advanced Photonic Applications

M Pugliese, CT Prontera, L Polimeno… - ACS Applied Nano …, 2020 - ACS Publications
In this paper, we report the fabrication and characterization of high-quality distributed Bragg
reflectors (DBRs) deposited by low-energetic thermal evaporation. This technique allows …

X-ray investigation of strained epitaxial layer systems by reflections in skew geometry

P Zaumseil - Journal of Applied Crystallography, 2017 - journals.iucr.org
Four different SiGe/Si layer structures, pseudomorphically grown and (partially) relaxed, are
used as examples to demonstrate that reflections in symmetric skew geometry can …

Effect of Ga flux and rf-power on homoepitaxial growth of single crystalline GaN films

TCS Krishna, N Aggarwal, M Mishra… - 2014 IEEE 2nd …, 2014 - ieeexplore.ieee.org
We investigated the effect of Ga flux and plasma power on the homoepitaxial growth of GaN
epitaxial films by Molecular Beam Epitaxy (MBE) on MOCVD-grown GaN templates on c …