[HTML][HTML] State of the art and future perspectives in advanced CMOS technology
The international technology roadmap of semiconductors (ITRS) is approaching the
historical end point and we observe that the semiconductor industry is driving …
historical end point and we observe that the semiconductor industry is driving …
[HTML][HTML] Miniaturization of CMOS
HH Radamson, X He, Q Zhang, J Liu, H Cui, J Xiang… - Micromachines, 2019 - mdpi.com
When the international technology roadmap of semiconductors (ITRS) started almost five
decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) …
decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) …
Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates
H Mertens, R Ritzenthaler, A Chasin… - 2016 IEEE …, 2016 - ieeexplore.ieee.org
We report on the CMOS integration of vertically stacked gate-all-around (GAA) silicon
nanowire MOSFETs, with matched threshold voltages (V t, sat~ 0.35 V) for N-and P-type …
nanowire MOSFETs, with matched threshold voltages (V t, sat~ 0.35 V) for N-and P-type …
Nanowire & nanosheet FETs for ultra-scaled, high-density logic and memory applications
A Veloso, T Huynh-Bao, P Matagne, D Jang… - Solid-State …, 2020 - Elsevier
We report on vertically stacked lateral nanowires (NW)/nanosheets (NS) gate-all-around
(GAA) FET devices as promising candidates to obtain a better power-performance metric for …
(GAA) FET devices as promising candidates to obtain a better power-performance metric for …
Demonstration of germanium vertical gate-all-around field-effect transistors featured by self-aligned high-κ metal gates with record high performance
A special Ge nanowire/nanosheet (NW/NS) p-type vertical sandwich gate-all-around (GAA)
field-effect transistor (FET)(Ge NW/NS pVSAFET) with self-aligned high-κ metal gates …
field-effect transistor (FET)(Ge NW/NS pVSAFET) with self-aligned high-κ metal gates …
Simulation of the effect of parasitic channel height on characteristics of stacked gate-all-around nanosheet FET
By using technology computer aided design (TCAD) simulation, the aim of this paper is to
investigate the effect of Si parasitic channel, which is placed under stacked nanosheet …
investigate the effect of Si parasitic channel, which is placed under stacked nanosheet …
Stacked Ge-nanosheet GAAFETs fabricated by Ge/Si multilayer epitaxy
CL Chu, K Wu, GL Luo, BY Chen… - IEEE Electron …, 2018 - ieeexplore.ieee.org
Horizontally stacked Ge-nanosheet gate-all-around FETs (GAAFETs) are demonstrated for
the first time. The Ge/Si multilayers instead of the typically used Ge/SiGe ones were …
the first time. The Ge/Si multilayers instead of the typically used Ge/SiGe ones were …
[HTML][HTML] Strain engineering in functional materials
Silicon based complementary metal-oxide-semiconductor field-effect-transistor (CMOSFET)
technology has continued to progress unabated for last five decades despite various …
technology has continued to progress unabated for last five decades despite various …
Novel GAA Si nanowire p-MOSFETs with excellent short-channel effect immunity via an advanced forming process
Q Zhang, H Yin, L Meng, J Yao, J Li… - IEEE Electron …, 2018 - ieeexplore.ieee.org
In this letter, Gate-All-Around (GAA) nanowire (NW) p-MOSFETs with new approaches to
fabricate totally isolated channels in replacement metal gate (RMG) are reported for the first …
fabricate totally isolated channels in replacement metal gate (RMG) are reported for the first …
[HTML][HTML] Four-period vertically stacked SiGe/Si channel FinFET fabrication and its electrical characteristics
Y Li, F Zhao, X Cheng, H Liu, Y Zan, J Li, Q Zhang… - Nanomaterials, 2021 - mdpi.com
In this paper, to solve the epitaxial thickness limit and the high interface trap density of SiGe
channel Fin field effect transistor (FinFET), a four-period vertically stacked SiGe/Si channel …
channel Fin field effect transistor (FinFET), a four-period vertically stacked SiGe/Si channel …