A review on performance comparison of advanced MOSFET structures below 45 nm technology node

N Mendiratta, SL Tripathi - Journal of Semiconductors, 2020 - iopscience.iop.org
CMOS technology is one of the most frequently used technologies in the semiconductor
industry as it can be successfully integrated with ICs. Every two years the number of MOS …

thin-film transistors (TFTs) for highly sensitive biosensing applications: a review

A Kumar, AK Goyal, N Gupta - … Journal of Solid State Science and …, 2020 - iopscience.iop.org
This review manuscript presents Thin-Film Transistors (TFTs) for various highly sensitive
biosensing applications. A low-cost, highly sensitive, early-stage diagnostic bio-sensing …

Analog and RF performance evaluation of junctionless accumulation mode (JAM) gate stack gate all around (GS-GAA) FinFET

B Kumar, R Chaujar - Silicon, 2021 - Springer
This work presents the analog and RF performance evaluation of Junctionless Accumulation
Mode (JAM) Gate Stack Gate All Around (GS-GAA) FinFET, and the results acquired have …

TCAD temperature analysis of gate stack gate all around (GS-GAA) FinFET for improved RF and wireless performance

B Kumar, R Chaujar - Silicon, 2021 - Springer
In this article, we investigated the impact of temperature variation on DC, analog, RF, and
wireless performance of Gate Stack Gate All Around (GS-GAA) FinFET using SILVACO Atlas …

Impact of band gap and gate dielectric engineering on novel Si0. 1Ge0. 9-GaAs lateral N-type charge plasma based JLTFET

K Kumar, SC Sharma - Microelectronics Journal, 2022 - Elsevier
In this research article, a device called dual dielectric gate hetero-material junctionless TFET
(DD-HJLTFET) is proposed using a novel amalgamation of Si 0.1 Ge 0.9/GaAs for the first …

Gate electrode work function engineered JAM-GS-GAA FinFET for analog/RF applications: Performance estimation and optimization

B Kumar, M Sharma, R Chaujar - Microelectronics Journal, 2023 - Elsevier
In this study, the gate electrode work function engineered Junctionless Accumulation Mode
Gate Stack Gate All Around (JAM-GS-GAA) FinFET has been rigorously investigated for …

Numerical study of JAM-GS-GAA FinFET: a Fin aspect ratio optimization for upgraded analog and intermodulation distortion performance

B Kumar, R Chaujar - Silicon, 2022 - Springer
This paper optimizes the fin aspect ratio (AR) of Junctionless Accumulation Mode Gate Stack
Gate All Around (JAM-GS-GAA) FinFET with constant conducting channel area for upgraded …

TCAD investigation of ferroelectric based substrate MOSFET for digital application

R Mann, R Chaujar - Silicon, 2022 - Springer
The present investigation is focused on the analog/RF performance of ferroelectric (FE)
based substrate metal oxide semiconductor field effect transistor (MOSFET) for digital …

Junctionless-accumulation-mode stacked gate GAA FinFET with dual-k spacer for reliable RFIC design

B Kumar, M Sharma, R Chaujar - Microelectronics Journal, 2023 - Elsevier
This study investigates how incorporating a dual-k spacer (SiO 2+ HfO 2) affects the RFIC
design feasibility of a junctionless-accumulation-mode (JAM) stacked-gate (GS) gate-all …

Electrical performance improvement of charge plasma-based junctionless TFET using novel coalescence of SiGe/GaAs and heterogeneous gate dielectric

K Kumar, A Kumar, SC Sharma - Applied Physics A, 2023 - Springer
In this research article, a junctionless tunnel field-effect transistor (JLTFET) based on the
charge plasma concept has been proposed and analyzed using novel coalescence of …