A review on performance comparison of advanced MOSFET structures below 45 nm technology node
N Mendiratta, SL Tripathi - Journal of Semiconductors, 2020 - iopscience.iop.org
CMOS technology is one of the most frequently used technologies in the semiconductor
industry as it can be successfully integrated with ICs. Every two years the number of MOS …
industry as it can be successfully integrated with ICs. Every two years the number of MOS …
thin-film transistors (TFTs) for highly sensitive biosensing applications: a review
This review manuscript presents Thin-Film Transistors (TFTs) for various highly sensitive
biosensing applications. A low-cost, highly sensitive, early-stage diagnostic bio-sensing …
biosensing applications. A low-cost, highly sensitive, early-stage diagnostic bio-sensing …
Analog and RF performance evaluation of junctionless accumulation mode (JAM) gate stack gate all around (GS-GAA) FinFET
This work presents the analog and RF performance evaluation of Junctionless Accumulation
Mode (JAM) Gate Stack Gate All Around (GS-GAA) FinFET, and the results acquired have …
Mode (JAM) Gate Stack Gate All Around (GS-GAA) FinFET, and the results acquired have …
TCAD temperature analysis of gate stack gate all around (GS-GAA) FinFET for improved RF and wireless performance
In this article, we investigated the impact of temperature variation on DC, analog, RF, and
wireless performance of Gate Stack Gate All Around (GS-GAA) FinFET using SILVACO Atlas …
wireless performance of Gate Stack Gate All Around (GS-GAA) FinFET using SILVACO Atlas …
Impact of band gap and gate dielectric engineering on novel Si0. 1Ge0. 9-GaAs lateral N-type charge plasma based JLTFET
K Kumar, SC Sharma - Microelectronics Journal, 2022 - Elsevier
In this research article, a device called dual dielectric gate hetero-material junctionless TFET
(DD-HJLTFET) is proposed using a novel amalgamation of Si 0.1 Ge 0.9/GaAs for the first …
(DD-HJLTFET) is proposed using a novel amalgamation of Si 0.1 Ge 0.9/GaAs for the first …
Gate electrode work function engineered JAM-GS-GAA FinFET for analog/RF applications: Performance estimation and optimization
In this study, the gate electrode work function engineered Junctionless Accumulation Mode
Gate Stack Gate All Around (JAM-GS-GAA) FinFET has been rigorously investigated for …
Gate Stack Gate All Around (JAM-GS-GAA) FinFET has been rigorously investigated for …
Numerical study of JAM-GS-GAA FinFET: a Fin aspect ratio optimization for upgraded analog and intermodulation distortion performance
This paper optimizes the fin aspect ratio (AR) of Junctionless Accumulation Mode Gate Stack
Gate All Around (JAM-GS-GAA) FinFET with constant conducting channel area for upgraded …
Gate All Around (JAM-GS-GAA) FinFET with constant conducting channel area for upgraded …
TCAD investigation of ferroelectric based substrate MOSFET for digital application
R Mann, R Chaujar - Silicon, 2022 - Springer
The present investigation is focused on the analog/RF performance of ferroelectric (FE)
based substrate metal oxide semiconductor field effect transistor (MOSFET) for digital …
based substrate metal oxide semiconductor field effect transistor (MOSFET) for digital …
Junctionless-accumulation-mode stacked gate GAA FinFET with dual-k spacer for reliable RFIC design
This study investigates how incorporating a dual-k spacer (SiO 2+ HfO 2) affects the RFIC
design feasibility of a junctionless-accumulation-mode (JAM) stacked-gate (GS) gate-all …
design feasibility of a junctionless-accumulation-mode (JAM) stacked-gate (GS) gate-all …
Electrical performance improvement of charge plasma-based junctionless TFET using novel coalescence of SiGe/GaAs and heterogeneous gate dielectric
In this research article, a junctionless tunnel field-effect transistor (JLTFET) based on the
charge plasma concept has been proposed and analyzed using novel coalescence of …
charge plasma concept has been proposed and analyzed using novel coalescence of …