An analytical 2-D model of double-gate metal-ferroelectric-insulator-semiconductor-negative-
capacitance FET (MFIS-NCFET), using Green's function approach, in the subthreshold …

We present a comprehensive study of multidomain (MD) effects in a perpendicular magnetic
tunnel junction (p-MTJ). The MD nucleation is considered in the free layer of MTJ, which …

This study simulated the structure of a Junctionless (JL) Double-Gate (DG) Metal Oxide
Semiconductor Field Effect Transistor (MOSFET) with symmetrical Side Gates (SG) and …

In this article, we present the dynamics and modeling of multidomains in the ferroelectric
FET (FeFET). Due to the periodic texture of domains, the electrostatics of the FeFET exhibit …

Ferroelectric tunnel junction (FTJ) with the dead layer (DE) exhibits the multidomain texture.
These multidomains in the ferroelectric (FE) cause the 2-D gradients in local polarization …

This paper describes a junctionless double-gate FET at nanoscale dimensions that utilizes a
ß-Ga2O3 packet to improve and amend the electric field at the device's beginning and in the …

In this paper surface potential for proposed asymmetrical junctionless double-gate (AJDG)
MOSFET having a channel length of 18 nm and gate, length is 11 nm is derived based on …

We have derived the 2-D analytical multidomain electrostatics model of the ferroelectric
tunnel junction (FTJ) in part-I of this work. Here, we have used the 2-D potential functions …

The impact of negative capacitance (NC) of the ferroelectric materials in controlling the direct
source to drain tunneling (DSDT) in ultra-short channel FETs is presented in this paper …

In this work, the investigation of high‐K gate‐stack‐based junctionless (JL) double‐gate
(DG) metal‐oxide‐semiconductor field‐effect transistor (MOSFET) is carried out to study the …