Electrical properties of amorphous Cu doped InSe thin films
AF Qasrawi, MKN Abuarra - Applied Physics A, 2023 - Springer
In this study, we employed thermal evaporation under vacuum conditions to introduce
copper dopants into amorphous InSe thin films. Our objective was to scrutinize the effects of …
copper dopants into amorphous InSe thin films. Our objective was to scrutinize the effects of …
Indium selenide thin film preparation by sol–gel technique
Abstracts Preparation and characterization of In–Se compound thin films prepared by sol–
gel methods on glass substrate have been studied. X-ray diffraction analyses and optical …
gel methods on glass substrate have been studied. X-ray diffraction analyses and optical …
Optical and physical properties of different composition of InxSe1− x thin films
N El-Kabnay, ER Shaaban, N Afify… - Physica B: Condensed …, 2008 - Elsevier
Thin film binary alloys of InxSe1− x (0.05⩽ x⩽ 0.30) have been prepared by the thermal
evaporation technique. The optical transmission and reflection spectrum of these films were …
evaporation technique. The optical transmission and reflection spectrum of these films were …
Temperature dependence of the band gap, refractive index and single-oscillator parameters of amorphous indium selenide thin films
AF Qasrawi - Optical Materials, 2007 - Elsevier
InSe thin films are obtained by evaporating InSe crystal onto ultrasonically cleaned glass
substrates under pressure of∼ 10− 5Torr. The structural and compositional analysis …
substrates under pressure of∼ 10− 5Torr. The structural and compositional analysis …
DC and ac electrical properties of the chalcogenide semiconductor Se0.9In0.1
SA El‐Hakim, FA El‐Wahab, AS Mohamed… - … status solidi (a), 2003 - Wiley Online Library
Abstract Se0. 9In0. 1 samples were prepared from their highly pure constituents, by ice‐
water quenching from the melts. Structural characterization using XRD and DTA has …
water quenching from the melts. Structural characterization using XRD and DTA has …
Space charge limited current, variable range hopping and mobility gap in thermally evaporated amorphous InSe thin films
C Viswanathan, S Gopal, M Thamilselvan… - Journal of Materials …, 2004 - Springer
We have analyzed the properties of as-deposited InSe thin films, deposited onto well
cleaned glass substrates under a vacuum of 10− 5 Torr, using X-ray diffraction, Rutherford …
cleaned glass substrates under a vacuum of 10− 5 Torr, using X-ray diffraction, Rutherford …
Effect of substrate temperature on the properties of vacuum evaporated indium selenide thin films
C Viswanathan, V Senthilkumar… - … of Experimental and …, 2005 - Wiley Online Library
Thin films of InSe were obtained by thermal evaporation techniques on glass substrates
maintained at various temperatures (Tsb= 30°, 400° C). X‐ray diffraction analysis showed …
maintained at various temperatures (Tsb= 30°, 400° C). X‐ray diffraction analysis showed …
Growth, electrical and structural characterization of β-GaSe thin films
GaSe thin films were deposited onto the glass substrates kept at 200° and 300° C by the
thermal evaporation of GaSe crystals under the pressure of 10− 5 Torr. X-ray analysis of the …
thermal evaporation of GaSe crystals under the pressure of 10− 5 Torr. X-ray analysis of the …
Conduction studies on electrodeposited indium selenide thin films
S Gopal, C Viswanathan, M Thamilselvan… - Ionics, 2004 - Springer
Indium Selenide thin films were electrodeposited on Indium Tin Oxide (ITO) coated glass
substrates from a mixture of Indium trichloride (InCl 3) and selenium dioxide (SeO 2) in …
substrates from a mixture of Indium trichloride (InCl 3) and selenium dioxide (SeO 2) in …
Universal single-phonon variable range hopping conduction for inorganic semiconducting polycrystalline films
SY Myong, KS Lim - Applied physics letters, 2006 - pubs.aip.org
Mott [Philos. Mag. 19, 835 (1969)] established the single-phonon variable range hopping
conduction from occupied to unoccupied localized states in disordered materials at low …
conduction from occupied to unoccupied localized states in disordered materials at low …