Impact of scaling on nanosheet FET and CMOS circuit applications
NA Kumari, VB Sreenivasulu… - ECS Journal of Solid State …, 2023 - iopscience.iop.org
In this paper, the impact of scaling on the gate all around the nanosheet field effect transistor
(GAA NSFET) is assessed in detail at sub-5-nm nodes for digital and analog/RF …
(GAA NSFET) is assessed in detail at sub-5-nm nodes for digital and analog/RF …
A comprehensive analysis and performance comparison of CombFET and NSFET for CMOS circuit applications
NA Kumari, P Prithvi - AEU-International Journal of Electronics and …, 2023 - Elsevier
The performance of comb-like channel field effect transistor (CombFET) and nanosheet FET
(NSFET) is addressed at both device and circuit levels at the 3-nm node. The CombFET is …
(NSFET) is addressed at both device and circuit levels at the 3-nm node. The CombFET is …
Design of resistive load inverter and common source amplifier circuits using symmetric and asymmetric nanowire FETs
VB Sreenivasulu, NA Kumari, V Lokesh… - Journal of Electronic …, 2023 - Springer
In this paper, multi-channel nanowire (NW) performance is significantly improved by
symmetric and asymmetric spacer length optimization. Device performance metrics …
symmetric and asymmetric spacer length optimization. Device performance metrics …
Ultrathin Pt and Mo films on Al1–xScxN: an interface investigation
Aluminum scandium nitride (Al 1–x Sc x N) with attractive ferroelectric and piezoelectric
properties is a promising material for next-generation device applications. However, the …
properties is a promising material for next-generation device applications. However, the …
A comprehensive analysis of nanosheet FET and its CMOS circuit applications at elevated temperatures
NA Kumari, P Prithvi - Silicon, 2023 - Springer
Abstract The Nanosheet Field Effect Transistor (NSFET) has been shown to be a viable
candidate for sub-7-nm technology nodes. This paper assesses and compares the NSFET …
candidate for sub-7-nm technology nodes. This paper assesses and compares the NSFET …
Nanosheet field effect transistor device and circuit aspects for future technology nodes
Moore's law states that the technical innovations are being absorbed already. The device's
controllability has dramatically improved since moving from a straightforward MOSFET …
controllability has dramatically improved since moving from a straightforward MOSFET …
Spacer engineering on nanosheet FETs towards device and circuit perspective
NA Kumari, VB Sreenivasulu, J Ajayan… - ECS Journal of Solid …, 2023 - iopscience.iop.org
Abstract The Nanosheet FET (NS FET) has proven to be a potential candidate for sub-5-nm
nodes. For the first time, in this manuscript, the NS FET performance is demonstrated by …
nodes. For the first time, in this manuscript, the NS FET performance is demonstrated by …
E‐Mode‐Operated Advanced III‐V Heterostructure Quantum Well Devices for Analog/RF and High‐Power Switching Applications
A Mohanbabu, N Vinodhkumar… - … for Integrated Circuit …, 2023 - Wiley Online Library
The most significant invention of the 20 th century was the transistor. After invented the first
transistor, the technology advancement based on transistor arrived very quickly in the …
transistor, the technology advancement based on transistor arrived very quickly in the …
Effects of parasitic gate capacitance and gate resistance on radiofrequency performance in LG = 0.15 μm GaN high‐electron‐mobility transistors for X‐band …
SJ Chang, HS Jeong, HW Jung, SM Choi… - ETRI …, 2024 - Wiley Online Library
The effects of the parasitic gate capacitance and gate resistance (Rg) on the radiofrequency
(RF) performance are investigated in LG= 0.15 μm GaN high‐electron‐mobility transistors …
(RF) performance are investigated in LG= 0.15 μm GaN high‐electron‐mobility transistors …