Diamond with an ultra-wide bandgap shows intrinsic performance that is extraordinarily
superior to those of the currently available wide-bandgap semiconductors for deep …

Ultra-wide bandgap materials show great promise as a solution to some of the limitations of
current state of the art semiconductor technology. Among these, diamond has exhibited …

Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power
electronics with capabilities beyond existing technologies due to its large bandgap …

The wide bandgap semiconductors SiC and GaN are already commercialized as power
devices that are used in the automotive, wireless, and industrial power markets, but their …

At present, the energy transition is leading to the replacement of large thermal power plants
by distributed renewable generation and the introduction of different assets. Consequently, a …

Many gadgets in our daily life work on the photodetection principle. These photodetectors
(such as silicon (Si), gallium arsenide (GaAs), and indium gallium arsenide (InGaAs)) work …

As a promising ultra-wide bandgap semiconductor, the β-phase of Ga 2 O 3 has attracted
more and more interest in the field of power electronics due to its ultra-wide bandgap (4.8 …

Diamond is a highly attractive material for ample applications in material science,
engineering, chemistry, and biology because of its favorable properties. The advent of …

With its remarkable electro-thermal properties such as the highest known thermal
conductivity (~ 22 W cm− 1 bold dot K− 1 at RT of any material, high hole mobility (> 2000 …

Diamond thin films are known to have properties similar to bulk diamond and have
applications in both industry and fundamental studies in academia. The high surface energy …