Organic semiconductors have sparked interest as flexible, solution processable, and
chemically tunable electronic materials. Improvements in charge carrier mobility put organic …

Scaling of silicon field-effect transistors has fueled the exponential development of
microelectronics in the past 60 years, but is now close to its physical limits with the critical …

The primary driver for the development of organic thin-film transistors (TFTs) over the past
few decades has been the prospect of electronics applications on unconventional substrates …

Moving beyond the limits of silicon transistors requires both a high-performance channel
and high-quality electrical contacts. Carbon nanotubes provide high-performance channels …

Carbon nanotubes (CNTs) continue to show strong promise as the channel material for an
aggressively scaled, high-performance transistor technology. However, there has been …

In this paper, we review some of the key challenges associated with the Ni silicidation
process in the most recent CMOS technologies. The introduction of new materials (eg SiGe) …

This paper reports ultralow contact resistivities (ρ c) achieved on highly doped p-SiGe with
two low-temperature contact formation methods. One method combines precontact …

Since the contact resistance characterized by a specific contact resistivity (ρ c) in the
source/drain (S/D) regions is becoming a bottleneck for further improving device …

Ti/p-Ge and NiGe/p-Ge contacts are compared on both planar-and fin-based devices. Ti/p-
Ge contacts show low contact resistance, while NiGe/p-Ge devices show short circuit …

The feasibility of dopant activation surpassing the equilibrium solid solubility limit by using
an out of equilibrium melt laser annealing (MLA) process was investigated. To that end, we …