The progressively decreasing feature size of the circuit components has tremendously
increased the need for the global surface planarization of the various thin film layers that …

The current review describes electrochemical evaluation and study of copper chemical–
mechanical polishing (CMP) slurries and post-CMP cleaning solutions. Electrochemical and …

Highly finished copper surface without any appreciable residual stress is in high demand in
electronics, space, and optical industries. Conventional finishing processes are not suitable …

Chemical-mechanical polishing (CMP) of copper was conducted in two acidic (pH 1.3 and
3.8) slurries and one alkaline pH (10∼ 12) slurry with alumina particles as the abrasives. In …

The chemical mechanical planarization (CMP) of copper-based structures is typically carried
out with slurries that contain an oxidant, a complexant, and a corrosion inhibitor. The …

Chemical–mechanical planarization (CMP) of copper is a vital process to produce sub-
micron range and multilevel metallization to meet the demands of the current interconnect …

Chemical mechanical polishing (CMP) is an essential process in the production of
integrated circuits containing copper interconnects. The role of glycine in reactive slurries …

Ball-end magnetorheological (MR) finishing process utilizes the magnetically controlled
stiffened ball of an MR fluid for finishing purposes. Copper is a mechanically soft and …

This study compares the oxidative dissolution, passivation, and polishing behavior of copper
in chemical mechanical polishing (CMP) the presence of glycine when the potential was …

Chemical mechanical polishing of copper was performed using as oxidizer and alumina
particles as abrasives. Electrochemical techniques were used to investigate the …