This review discusses how low-energy valence excitations created by swift electrons can
render information on the optical response of structured materials with unmatched spatial …

The experimental study of InN and In-rich InGaN by a number of structural, optical and
electrical methods is reviewed. Recent advances in thin film growth have produced single …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

The III nitrides have been intensely studied in recent years because of their huge potential
for everything from high-efficiency solid-state lighting and photovoltaics to high-power and …

III-Nitrides receive much research attention and obtain significant development due to their
wide applications in light emitting diodes, laser diodes, ultraviolet detectors, solar cells, field …

Energetic particle irradiation is used to systematically introduce point defects into In 1− x Ga
x N alloys over the entire composition range. Three types of energetic particles (electrons …

Following a short history of its development, the latest advances in the physics of InN and
the arguments surrounding the band-gap controversy are critically reviewed. The role of …

Ammonothermal synthesis is a method for synthesis and crystal growth suitable for a large
range of chemically different materials, such as nitrides (eg, GaN, AlN), amides (eg, LiNH2 …

The influence of the growth parameters on the photoluminescence (PL) spectra has been
investigated for samples with columnar morphology, either with InN columns on original …

Detailed transmission electron microscopy, x-ray diffraction (XRD), and optical
characterization of a variety of InN thin films grown by molecular-beam epitaxy under both …