Power semiconductor devices are key components in power conversion systems. Silicon
carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable …

Owing to the superior properties of the wide bandgap, high carrier mobility, high thermal
conductivity and high stability, 4H silicon carbide (4H-SiC) holds great promise for …

In the last ten years, large improvements in the epitaxial silicon carbide processes have
been made. The introduction of chloride precursors, the epitaxial growth on large area …

The widespread use of 4H silicon carbide (4H-SiC) is just around the corner since high-
power electronics based on 4H-SiC are increasingly fabricated to enable the low-carbon …

Despite the decades of development of the single-crystal growth and homoepitaxy of 4H
silicon carbide (4H-SiC), high-density threading dislocations (TDs) still remain in 4H-SiC. In …

Recent progress and current understanding of carrier lifetimes and avalanche phenomena
in silicon carbide (SiC) are reviewed. The acceptor level of carbon vacancy (VC), called the …

Shockley-type stacking faults expanded in 4H–SiC epilayers induced by ultraviolet
illumination were investigated using a photoluminescence imaging method, a …

We revisited stacking fault identification based on the characteristic photoluminescence
emission wavelengths of 4H–SiC epitaxial wafers, and we investigated 50 000 stacking …

Birefringence imaging is one of the powerful methods for non-destructive characterization of
defects in the semiconductor crystals. However, due to the complicated and unclear …

Dislocations in n-and p-type substrates as well as in epitaxial layers (epilayers) were clearly
identified using a photoluminescence (PL) imaging technique. Dislocations in epilayers …