In this article, we propose an extended-source double-gate tunnel field-effect transistor
(ESDG-TFET) to enhance the dc and analog/RF performance. The source of an ESDG-TFET …

The gate–source overlap length () in the line tunneling FET (L-TFET) can be used as a
design parameter to improve the analog circuit performance. In this paper, we investigate …

The analog circuit performance of tunnel field-effect-transistor (TFET) can be improved by
implementing the concept of gate-source overlap. This paper investigates the impact of …

This work presents the behavior of Line Tunneling Field Effect Transistors (Line-TFET) at the
saturation like region with different device's dimensions. In spite of the drain current and …

Modern semiconductor devices have established a new dimension in handheld consumer
and healthcare electronics, such as tablet PC, smartphones, and sensors. This requires an …

The gate-all-around (GAA) silicon-on-insulator (SOI) Schottky barrier (SB) nano-wire (NW)
MOSFET was recently proposed for low-power and high-frequency analog and radio …

The basic analog parameters of three splits of In x Ga 1-x As nTFETs are analyzed for the
first time. The first two splits are In 0.53 Ga 0.47 As devices with a 3-nm HfO 2/1-nm Al 2 O 3 …

The analog parameters of In 0.53 Ga 0.47 As and In 0.7 Ga 0.3 As nTFETs with solid state
Zn diffused source are investigated from room temperature down to 10 K. The In 0.7 Ga 0.3 …

The intrinsic gain is a key metric in analog electronics, it is the highest gain that can be
obtained for an amplifier in the transistor configuration. However, there lack the …

This work presents the design of Low Dropout Voltage Regulator (LDO) with Line-Tunnel
Field Effect Transistor (Line-TFET), in which the transistor was modeled using Verilog-A and …