High-speed and low-power area-efficient memory solutions are in high demand in today's
smart and internet environment. To program and store data and its associated information, it …

Making magnetic tunnel junctions (MTJs) smaller while meeting performance requirements
is critical for future electronics with spin-transfer torque magnetoresistive random access …

Topological solitons are exciting candidates for the physical implementation of next-
generation computing systems. As these solitons are nanoscale and can be controlled with …

The demand for data processing in high-performance computing is growing rapidly.
Extrapolating these trends to the long term suggests that a switch, which is more energy …

Abstract Magnetic Tunnel Junctions (MTJ) are employed in a range of technologies such as
data storage, sensing, and so on due to their compact nature and high field sensitivity. In …

Magnetic sensors are key elements in many industrial, security, military, and biomedical
applications. Heusler alloys are promising materials for magnetic sensor applications due to …

Magnetic properties of thin metallic films are strongly dependent on the growth parameters.
Therefore, fine-tuning these parameters is necessary to produce multilayers with specific …

Spin–orbit torque magnetic tunnel junction (SOT-MTJ) is the memory cell of magnetic
random access memory (MRAM), which is a promising candidate for upper level cache in …

Perpendicular magnetic anisotropy (PMA) is crucial in magnetic tunnel junctions (MTJs) for
next-generation devices such as non-volatile memory devices–magnetic random-access …

The domain wall-magnetic tunnel junction (DW-MTJ) is a versatile device that can
simultaneously store data and perform computations. These three-terminal devices are …