Energy band structure, acoustic velocities, optical phonon frequencies and mechanical properties of InP1-xSbx alloys under temperature and pressure
EB Elkenany - Infrared Physics & Technology, 2021 - Elsevier
The dependence of electronic band structure, optical phonon frequencies, acoustic
velocities, and mechanical properties of InP 1-x Sb x alloys on temperature and pressure …
velocities, and mechanical properties of InP 1-x Sb x alloys on temperature and pressure …
Acoustic velocity and phonon frequencies of GaxIn1− xSb alloys under pressure, temperature, and compositions
EB Elkenany - Physica Scripta, 2021 - iopscience.iop.org
In the present work, we have reported the empirical pseudo-potential method (EPM) based
on the virtual crystal approximation (VCA) incorporated the compositional disorder effect …
on the virtual crystal approximation (VCA) incorporated the compositional disorder effect …
First principle characterization of structural, electronic, mechanical, thermodynamic, linear and nonlinear optical properties of zinc blende InAs, InSb and their …
Y Asadi, Z Nourbakhsh - Journal of Physics and Chemistry of Solids, 2019 - Elsevier
The structural and electronic properties of InAs x Sb 1-x ternary alloys are studied using
plane-wave pseudopotential method based on the density functional theory. The Born …
plane-wave pseudopotential method based on the density functional theory. The Born …
Insight into pressure effect on optoelectronic, mechanical, and lattice vibrational properties of nanostructured GaxIn1 − xPySbzAs1 − y − z for the solar cells system
The electronic, optical, and elastic characteristics of the GaxIn1− xPySbzAs1− y− z alloy
lattice matched to the GaSb substrate using a pseudo-potential formalism (EPM) based on …
lattice matched to the GaSb substrate using a pseudo-potential formalism (EPM) based on …
Thermal and pressure dependence of mechanical properties for AlxIn1−xPySb1−y/GaSb system
Mechanical properties of Al x In 1− x P y Sb 1− y quaternary alloy in zinc-blend structure
lattice-matched to GaSb substrate are studied under the effects of temperature and pressure …
lattice-matched to GaSb substrate are studied under the effects of temperature and pressure …
Crystal field, electronegativity and magnetic behavior of Mn-, Fe-, Co-and Ni-doped LiMgN half-Heusler: KKR-CPA approximation
Y Ziat, Z Zarhri, H Belkhanchi - International Journal of Modern …, 2024 - World Scientific
This paper aims to investigate the behavior of LiMgN half-Heusler (HH) semiconductor
doped by transition metals (TM= Mn, Fe, Co and Ni). HHs belong to the F 4 ̄ 3 m space …
doped by transition metals (TM= Mn, Fe, Co and Ni). HHs belong to the F 4 ̄ 3 m space …
Mechanical, optical, and lattice vibrational properties of gallium antimonide (GaSb) semiconductor under the influence of temperature
IF Al Maaitah - Physica Scripta, 2023 - iopscience.iop.org
We have determined the optical, mechanical, and lattice dynamic features of the zinc-blende
GaSb compound. It has been investigated how temperature affects longitudinal and …
GaSb compound. It has been investigated how temperature affects longitudinal and …
Structural and optical properties of GaAs and InAs for doping Sb under the effect of pressure and temperature: DFT and EPM investigations
MSH Othman, EB Elkenany - Optical and Quantum Electronics, 2022 - Springer
We have developed first-principles calculations utilizing the empirical pseudopotential
method and density functional theory to examine the basic behaviors of the GaAs and InAs …
method and density functional theory to examine the basic behaviors of the GaAs and InAs …
Research on high sensitivity fano resonance sensing based on MIM waveguide coupled with double Fibonacci spirals
D Qu, Q Wu, Y Sun, C Li - Journal of Computational Electronics, 2023 - Springer
In this paper, a metal–insulator–metal waveguide coupled with double Fibonacci spiral
structure is designed and studied. The Fano resonance characteristics of the structure are …
structure is designed and studied. The Fano resonance characteristics of the structure are …
Impact of pressure on electronic and mechanical properties of AlAs1-xPx ternary alloys
The pressure dependence of mechanical and electrical properties of AlAs 1-x P x is studied
within the pressure range of 0–120 kbar using the empirical pseudopotential method (EPM) …
within the pressure range of 0–120 kbar using the empirical pseudopotential method (EPM) …