Experimental synthesis of theoretically predicted multivalent ternary nitride materials

A Zakutayev, SR Bauers, S Lany - Chemistry of Materials, 2022 - ACS Publications
Multivalent ternary nitride materials, which combine two metal cations with a nitrogen anion
in equal amounts and charge balanced stoichiometry, tend to have relatively simple …

Zinc titanium nitride semiconductor toward durable photoelectrochemical applications

AL Greenaway, S Ke, T Culman, KR Talley… - Journal of the …, 2022 - ACS Publications
Photoelectrochemical fuel generation is a promising route to sustainable liquid fuels
produced from water and captured carbon dioxide with sunlight as the energy input …

Band Gap-Tunable (Mg, Zn)SnN2 Earth-Abundant Alloys with a Wurtzite Structure

N Yamada, M Mizutani, K Matsuura… - ACS Applied …, 2021 - ACS Publications
Herein, wurtzite-type MgSnN2–ZnSnN2 alloys (Mg x Zn1–x SnN2) are proposed as earth-
abundant and band gap-tunable semiconductors with fundamental band gaps in the range …

[HTML][HTML] Computational Fermi level engineering and doping-type conversion of Mg: Ga2O3 via three-step synthesis process

A Goyal, A Zakutayev, V Stevanović… - Journal of Applied Physics, 2021 - pubs.aip.org
Gallium oxide (Ga 2 O 3) is being actively explored for electronics that can operate at high
power, temperature, and frequency as well as for deep-ultraviolet optoelectronics and other …

Bulk synthesis, structure, and electronic properties of magnesium zirconium nitride solid solutions

CL Rom, MJ Fallon, A Wustrow, AL Prieto… - Chemistry of …, 2021 - ACS Publications
Ternary nitride phase space holds great potential for new functional materials, as suggested
by computational predictions of yet-to-be discovered stable phases. Here, we report a …

Combinatorial Synthesis of Cation-Disordered Manganese Tin Nitride MnSnN2 Thin Films with Magnetic and Semiconducting Properties

CL Rom, RW Smaha, CL Melamed… - Chemistry of …, 2023 - ACS Publications
Magnetic semiconductors may soon improve the energy efficiency of microelectronics, but
materials exhibiting these dual properties remain underexplored. Here, we report the …

Composition-Dependent Properties of Wurtzite-Type Mg1+xSn1–xN2 Epitaxially Grown on GaN(001) Templates

N Yamada, K Matsuura, M Imura… - ACS Applied …, 2021 - ACS Publications
The variety of wurtzite-type semiconductors with band gaps of 1.8–2.5 eV is limited, which
hinders filling the “green gap”. This remains an unresolved problem in green light-emitting …

Two-step solid-state synthesis of ternary nitride materials

PK Todd, MJ Fallon, JR Neilson… - ACS Materials …, 2021 - ACS Publications
Ternary nitride materials hold promise for many optical, electronic, and refractory
applications; yet, their preparation via solid-state synthesis remains challenging. Often, high …

Oxidation-resistant amorphous zinc tin nitride films with tunable optical and electrical properties

JW Choi, J Kim, SR Pae, J Kim, CG Kim… - Chemistry of …, 2022 - ACS Publications
Zinc tin nitride (ZTN) compounds exhibit excellent optical and defect-tolerance properties
desirable for optoelectronic applications. However, the synthesis of high-phase-purity ZTN is …

Metastable Ta 2 N 3 with highly tunable electrical conductivity via oxygen incorporation

CM Jiang, LI Wagner, MK Horton, J Eichhorn… - Materials …, 2021 - pubs.rsc.org
The binary Ta–N chemical system includes several compounds with notable prospects in
microelectronics, solar energy harvesting, and catalysis. Among these, metallic TaN and …