In this paper, we present a comprehensive review and discussion of the state-of-the-art
device technology and application development of GaN-on-Si power electronics. Several …

This article presents the state-of-the-art electric vehicle (EV) charging technologies that
benefit from the wide bandgap (WBG) devices, which is regarded as the most significant …

This paper presents the development of a Class-D full-bridge zero-voltage switching (ZVS)
inverter, applicable to wireless power transfer (WPT) systems, operating at 13.56 MHz …

Lidar optical time-of-flight measurement has become an important method of accurate
determination of distance to remote targets. Some lidar applications, such as 3-D continuous …

The new packaging technologies used for gallium nitride (GaN) devices avoid wire bonds
and leads in order to completely utilize their switching performance. This also means that …

Recently, a major challenge in the adoption of wide bandgap semiconductors for power
electronic applications is the need to trade device performance for device safety. In this …

The GaN HEMT devices have great potential for high-power, high-temperature, and high-
frequency applications. However, it is challenging to package GaN HEMTs power module …

A comprehensive study on buffer vertical leakage mechanism and buffer reliability of 200-
mm GaN-on-SOI is conducted in this paper. The buffer vertical leakage current versus bias is …

Gallium nitride (GaN) power devices are commercially available from a number of suppliers
and the market is growing. The predominant GaN technology is normally-off enhancement …

Advanced packaging technologies in Wide band gap devices like GaN avoid wire bonds
thereby making the solder joints more susceptible to thermo-mechanical fatigue. To limit the …