Considerations for ultimate CMOS scaling
KJ Kuhn - IEEE transactions on Electron Devices, 2012 - ieeexplore.ieee.org
This review paper explores considerations for ultimate CMOS transistor scaling. Transistor
architectures such as extremely thin silicon-on-insulator and FinFET (and related …
architectures such as extremely thin silicon-on-insulator and FinFET (and related …
Nanoplasmonics: past, present, and glimpse into future
MI Stockman - Optics express, 2011 - opg.optica.org
A review of nanoplasmonics is given. This includes fundamentals, nanolocalization of
optical energy and hot spots, ultrafast nanoplasmonics and control of the spatiotemporal …
optical energy and hot spots, ultrafast nanoplasmonics and control of the spatiotemporal …
Integrated Circuits Based on Bilayer MoS2 Transistors
Two-dimensional (2D) materials, such as molybdenum disulfide (MoS2), have been shown
to exhibit excellent electrical and optical properties. The semiconducting nature of MoS2 …
to exhibit excellent electrical and optical properties. The semiconducting nature of MoS2 …
Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics
Two-dimensional layered materials, such as molybdenum disulfide, are emerging as an
exciting material system for future electronics due to their unique electronic properties and …
exciting material system for future electronics due to their unique electronic properties and …
An energy-efficient comparator with dynamic floating inverter amplifier
This article presents an energy-efficient comparator design. The pre-amplifier adopts an
inverter-based input pair powered by a floating reservoir capacitor; it realizes both current …
inverter-based input pair powered by a floating reservoir capacitor; it realizes both current …
A low-power low-noise CMOS amplifier for neural recording applications
RR Harrison, C Charles - IEEE Journal of solid-state circuits, 2003 - ieeexplore.ieee.org
There is a need among scientists and clinicians for low-noise low-power biosignal amplifiers
capable of amplifying signals in the millihertz-to-kilohertz range while rejecting large dc …
capable of amplifying signals in the millihertz-to-kilohertz range while rejecting large dc …
[图书][B] CMOS digital integrated circuits
SM Kang, Y Leblebici - 2003 - … -winter19-01.courses.soe.ucsc.edu
CMOS Digital Integrated Circuits Page 1 CMOS Digital Integrated Circuits Chapter 13 Chip Input
and Output (I/O) Circuits SM Kang, Y. Leblebici, and C. Kim 1 Copyright © 2014 McGraw-Hill …
and Output (I/O) Circuits SM Kang, Y. Leblebici, and C. Kim 1 Copyright © 2014 McGraw-Hill …
[图书][B] Semiconductor physical electronics
SS Li - 2012 - books.google.com
The purpose of this book is to provide the reader with a self-contained treatment of
fundamen tal solid state and semiconductor device physics. The material presented in the …
fundamen tal solid state and semiconductor device physics. The material presented in the …
Ultra-low power VLSI circuit design demystified and explained: A tutorial
M Alioto - IEEE Transactions on Circuits and Systems I: Regular …, 2012 - ieeexplore.ieee.org
In this paper, the state of the art in ultra-low power (ULP) VLSI design is presented within a
unitary framework for the first time. A few general principles are first introduced to gain an …
unitary framework for the first time. A few general principles are first introduced to gain an …
An analytical MOS transistor model valid in all regions of operation and dedicated to low-voltage and low-current applications
A fully analytical MOS transistor model dedicated to the design and analysis of low-voltage,
low-current analog circuits is presented. All the large-and small-signal variables, namely the …
low-current analog circuits is presented. All the large-and small-signal variables, namely the …