Novel fabrication techniques for ultra-thin silicon based flexible electronics
Flexible electronics offer a multitude of advantages, such as flexibility, lightweight property,
portability, and high durability. These unique properties allow for seamless applications to …
portability, and high durability. These unique properties allow for seamless applications to …
Investigation of reducing interface state density in 4H-SiC by increasing oxidation rate
Detailed investigations of the pre-oxidation phosphorus implantation process are required to
increase the oxidation rate in 4H-SiC metal-oxide-semiconductor (MOS) capacitors. This …
increase the oxidation rate in 4H-SiC metal-oxide-semiconductor (MOS) capacitors. This …
Unfolding the conductivity reversal n-to p-type in phosphorus-doped ZnO thin films by spin-on dopant (SOD) process
Phosphorus doping induced p-type doping in ZnO thin films based on spin-on dopant (SOD)
process is reported in this article. Owing to the reduced dependence on the conventional …
process is reported in this article. Owing to the reduced dependence on the conventional …
Donor incomplete ionization and mobility enhancement in ultra-thin silicon-on-insulator films doped by phosphorus end-terminated polymers
A Pulici, S Kuschlan, G Seguini… - Journal of Materials …, 2024 - pubs.rsc.org
Ex situ doping of ultra-thin silicon-on-insulator (SOI) substrates is performed by using
polymers terminated with a doping containing moiety. The injection of P impurity atoms is …
polymers terminated with a doping containing moiety. The injection of P impurity atoms is …
Stochastic assessment of dissolution at fluid‐mineral interfaces
Chemical weathering associated with dissolution/precipitation at interfaces between
minerals and flowing fluids is key for the evolution of geologic systems, including …
minerals and flowing fluids is key for the evolution of geologic systems, including …
[HTML][HTML] Optimizing Germanium-Selective Functionalization on Patterned SiGe Substrates with Thiol-Based Molecules: The Critical Role of Oxygen-Free Conditions
Germanium offers attractive optical properties despite being an indirect bandgap
semiconductor, and new Ge-based devices are being optimized for sensing and photonics …
semiconductor, and new Ge-based devices are being optimized for sensing and photonics …
Doping of silicon with phosphorus end-terminated polymers: source characterization and dopant diffusion in SiO 2
A polystyrene homopolymer with narrow molecular weight distribution (Mn= 2.3±0.3 kg mol−
1, Đ= 1.05±0.01) and end-terminated with a phosphorus containing moiety has been used to …
1, Đ= 1.05±0.01) and end-terminated with a phosphorus containing moiety has been used to …
Nanowire-Based Si-CMOS Devices
RK Mishra, V Mishra, SN Mishra - … Si-Based CMOS Devices: Materials to …, 2024 - Springer
Nanowire-based Si-CMOS devices are rapidly emerging as promising foundational
components for the next generation of semiconductor devices. This chapter delves into the …
components for the next generation of semiconductor devices. This chapter delves into the …
Inverse opal optical Tamm state for sensing applications
We report the excitation of optical Tamm states (OTS) in inverse opal (IO)-based three-
dimensional photonic crystal on a flat metal substrate, validated through both numerical …
dimensional photonic crystal on a flat metal substrate, validated through both numerical …
Investigation of Highly Efficient Dual-Band Photodetector Performance of Spin-on-Doping (SOD) Grown p-Type Phosphorus Doped ZnO (P:ZnO)/n-GaO …
We developed a stable and reproducible p-type P: ZnO thin film using a cost-effective
solution-derived spin-on-doping (SOD) technique. We created a pure pn heterojunction by …
solution-derived spin-on-doping (SOD) technique. We created a pure pn heterojunction by …