Abstract A review of III–V nanowire-based infrared photodetectors is provided including
single nanowires, ensemble nanowires, and heterostructured nanowires. The performance …

Recently, III-V semiconductor nanowires have been widely explored as promising
candidates for high-performance photodetectors due to their one-dimensional morphology …

Single-crystal indium antimony (InSb) nanowire was fabricated into middle-infrared
photodetectors based on a metal–semiconductor-metal (MSM) structure. The InSb …

High aspect-ratio InSb nanowires (NWs) of high chemical purity are sought for implementing
advanced quantum devices. The growth of InSb NWs is challenging, generally requiring a …

In recent years, quasi-1D semiconductor nanowires have attracted significant research
interest in the field of optoelectronic devices. Indium arsenide (InAs) nanowire, a III–V …

Semiconductor nanowires have been explored as alternative electronic materials for high
performance device applications exhibiting low power consumption specs. Electrical …

Colloidal semiconductor quantum dot/graphene van der Waals heterostructure nanohybrids
are emerging technologies for photodetection. These nanohybrids combine the advantages …

Infrared (IR) cameras have versatile applications; however, the low performance and high
cost of conventional photodetectors have prevented their widespread utilization in various …

This article summarizes some of the critical features of pure indium antimonide nanowires
(InSb NWs) growth and their potential applications in the industry. In the first section …

Narrow bandgap semiconductors like indium antimonide (InSb) are very suitable for high-
performance room temperature infrared photodetectors, but the fragile nature of the wafer …