Review of high-temperature power electronics converters
Power electronics converters operating at elevated temperature usually have degraded
performance, such as reduced efficiency, lower noise immunity, and decreased system …
performance, such as reduced efficiency, lower noise immunity, and decreased system …
[图书][B] Gallium nitride and silicon carbide power devices
BJ Baliga - 2016 - books.google.com
During the last 30 years, significant progress has been made to improve our understanding
of gallium nitride and silicon carbide device structures, resulting in experimental …
of gallium nitride and silicon carbide device structures, resulting in experimental …
Emerging trends in van der Waals 2D TMD heterojunction bipolar transistors
The bipolar junction transistor, which is also known as a BJT, has become an essential
component for many modern circuits that are used for high-speed computing and …
component for many modern circuits that are used for high-speed computing and …
Atomic-monolayer two-dimensional lateral quasi-heterojunction bipolar transistors with resonant tunneling phenomenon
High-frequency operation with ultrathin, lightweight, and extremely flexible semiconducting
electronics is highly desirable for the development of mobile devices, wearable electronic …
electronics is highly desirable for the development of mobile devices, wearable electronic …
Comparison of static and switching characteristics of 1200 V 4H-SiC BJT and 1200 V Si-IGBT
Y Gao, AQ Huang, S Krishnaswami… - IEEE Transactions …, 2008 - ieeexplore.ieee.org
In this paper, static and switching characteristics of a 1200 V 4H-silicon carbide (SiC) bipolar
junction transistor (BJT) at a bus voltage of 600 V are reported for the first time. Comparison …
junction transistor (BJT) at a bus voltage of 600 V are reported for the first time. Comparison …
[HTML][HTML] 1.7-kV vertical GaN pn diode with triple-zone graded junction termination extension formed by ion-implantation
Edge termination has emerged as an important area in the design and realization of vertical
GaN power electronic devices. While the material properties of GaN are promising for high …
GaN power electronic devices. While the material properties of GaN are promising for high …
Modeling and characterization of current gain versus temperature in 4H-SiC power BJTs
Accurate physical modeling has been developed to describe the current gain of silicon
carbide (SiC) power bipolar junction transistors (BJTs), and the results have been compared …
carbide (SiC) power bipolar junction transistors (BJTs), and the results have been compared …
Design and performance evaluation of a 200° C interleaved boost converter
H Kosai, J Scofield, S McNeal… - IEEE transactions on …, 2012 - ieeexplore.ieee.org
Recent advances in silicon carbide (SiC) power semiconductor technology and resulting
availability of SiC Schottky rectifiers and controlled devices (bipolar junction transistors …
availability of SiC Schottky rectifiers and controlled devices (bipolar junction transistors …
Low-voltage and high-gain ultraviolet detector based on 4H-SiC npn bipolar phototransistor
S Guo, X Zhao, Y He, Z Pan, M Yang… - … on Electron Devices, 2021 - ieeexplore.ieee.org
A two-terminal 4H-SiC npn bipolar phototransistor detector (PTD) with high gain is
demonstrated. It was fabricated using the 4H-SiC epitaxial wafer grown by high-temperature …
demonstrated. It was fabricated using the 4H-SiC epitaxial wafer grown by high-temperature …
Geometrical effects in high current gain 1100-V 4H-SiC BJTs
M Domeij, HS Lee, E Danielsson… - IEEE electron device …, 2005 - ieeexplore.ieee.org
This paper reports the fabrication of epitaxial 4H-SiC bipolar junction transistors (BJTs) with
a maximum current gain/spl beta/= 64 and a breakdown voltage of 1100 V. The high/spl …
a maximum current gain/spl beta/= 64 and a breakdown voltage of 1100 V. The high/spl …